Resonance Raman scattering in semiconductors and semiconductor microstructures

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resonance Raman Scattering is a unique form of modulation spectroscopy that uses the material's phonons rather than externally supplied agents to modulate the electronic structure. We review the applications of this technique to semiconducting materials. Special emphasis is given to research on quantum well and superlattice systems, particularly to phonon localization effects and to analysis of resonant profiles.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
PublisherPubl by Int Soc for Optical Engineering
Pages275-279
Number of pages5
ISBN (Print)0819403377
StatePublished - Dec 1 1990
EventInternational Conference on Modulation Spectroscopy - San Diego, CA, USA
Duration: Mar 19 1990Mar 21 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1286
ISSN (Print)0277-786X

Other

OtherInternational Conference on Modulation Spectroscopy
CitySan Diego, CA, USA
Period3/19/903/21/90

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Menendez, J. (1990). Resonance Raman scattering in semiconductors and semiconductor microstructures. In F. H. Pollak, M. Cardona, & D. E. Aspnes (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 275-279). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1286). Publ by Int Soc for Optical Engineering.