Resonance Raman scattering in InSb: Deformation potentials and interference effects at the E1 gap

J. Menéndez, L. Via, M. Cardona, E. Anastassakis

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

This paper presents a reevaluation of the optical-phonon deformation potential constants near the E1 gap of InSb. The absolute values of the deformation potentials d1,05 and d3,05 are obtained from a measurement of the Raman efficiency for allowed LO-phonon scattering and a fit of previous uniaxial-stress experiments by using new ellipsometric data for the optical susceptibility. The signs of the deformation potentials are deduced from a study of the interference between the amplitudes for forbidden and allowed LO-Raman scattering. The values obtained are d1,05=-16.24 eV and d3,05=32.98 eV. The study of the interference also provides information about the relative weight of different sources of forbidden LO-Raman scattering.

Original languageEnglish (US)
Pages (from-to)3966-3973
Number of pages8
JournalPhysical Review B
Volume32
Issue number6
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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