Resonance Raman scattering by optical phonons in GaAs near the E0 band gap

A. K. Sood, W. Kauschke, J. Menéndez, M. Cardona

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We report the resonance of the first-order Raman scattering by longitudinal and transverse optical phonons in GaAs very near to the E0 band gap at 100 K. The resonance enhancement observed at E0 for deformation-potential (TO,LO) and Fröhlich-interaction-induced (LO) scattering is about 100 times larger than calculated for uncorrelated electron-hole pairs. The effect is attributed to the Coulomb correlation of discrete and continuum excitons and agrees with Martins calculation of these effects. The Faust-Henry coefficient is found to be nearly independent of frequency in the region of our measurements (C=-0.60.2).

Original languageEnglish (US)
Pages (from-to)2886-2891
Number of pages6
JournalPhysical Review B
Volume35
Issue number6
DOIs
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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