Resonance phenomenon in double-bend-point contact structures

Jong C. Wu, Martin N. Wybourne, Andreas Weisshaar, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages200-209
Number of pages10
Volume1676
ISBN (Print)0819408379
StatePublished - 1992
Externally publishedYes
EventAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA
Duration: Mar 23 1992Mar 26 1992

Other

OtherAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
CitySomerset, NJ, USA
Period3/23/923/26/92

Fingerprint

Semiconductor quantum wires
Point contacts
electric contacts
quantum wires
cavities
Elastic scattering
Cyclotrons
High electron mobility transistors
Quenching
Magnetic fields
cyclotrons
Electrons
plateaus
discontinuity
elastic scattering
field effect transistors
quenching
disorders
modulation
conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Wu, J. C., Wybourne, M. N., Weisshaar, A., & Goodnick, S. (1992). Resonance phenomenon in double-bend-point contact structures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1676, pp. 200-209). Bellingham, WA, United States: Publ by Int Soc for Optical Engineering.

Resonance phenomenon in double-bend-point contact structures. / Wu, Jong C.; Wybourne, Martin N.; Weisshaar, Andreas; Goodnick, Stephen.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1676 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1992. p. 200-209.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, JC, Wybourne, MN, Weisshaar, A & Goodnick, S 1992, Resonance phenomenon in double-bend-point contact structures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1676, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 200-209, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, Somerset, NJ, USA, 3/23/92.
Wu JC, Wybourne MN, Weisshaar A, Goodnick S. Resonance phenomenon in double-bend-point contact structures. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1676. Bellingham, WA, United States: Publ by Int Soc for Optical Engineering. 1992. p. 200-209
Wu, Jong C. ; Wybourne, Martin N. ; Weisshaar, Andreas ; Goodnick, Stephen. / Resonance phenomenon in double-bend-point contact structures. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1676 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1992. pp. 200-209
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