Resonance phenomenon in double-bend-point contact structures

Jong C. Wu, Martin N. Wybourne, Andreas Weisshaar, Stephen M. Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages200-209
Number of pages10
ISBN (Print)0819408379
StatePublished - Dec 1 1992
Externally publishedYes
EventAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA
Duration: Mar 23 1992Mar 26 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1676
ISSN (Print)0277-786X

Other

OtherAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
CitySomerset, NJ, USA
Period3/23/923/26/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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