Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

V. I. Kadushkin; Yu G. Sadof'ev; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1134/S1063782607030165

Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

V. I. Kadushkin, Yu G. Sadof'ev, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) _{T = const}, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) _{T = const} are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n _s ≈ 8 × 10¹¹ cm^-2.

Original language	English (US)
Pages (from-to)	327-334
Number of pages	8
Journal	Semiconductors
Volume	41
Issue number	3
DOIs	https://doi.org/10.1134/S1063782607030165
State	Published - Mar 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{aead0ae54c4b44869759b05ad34894fa,

title = "Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field",

abstract = "The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.",

author = "Kadushkin, {V. I.} and Sadof'ev, {Yu G.} and Bird, {J. P.} and Shane Johnson and Yong-Hang Zhang",

note = "Funding Information: This study was supported by the Ministry of Education and Science of the Russian Federation (grant no. E02-3.4-319) and the State contract no. 40.012.1.1.1153.",

year = "2007",

month = mar,

doi = "10.1134/S1063782607030165",

language = "English (US)",

volume = "41",

pages = "327--334",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "3",

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TY - JOUR

T1 - Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

AU - Kadushkin, V. I.

AU - Sadof'ev, Yu G.

AU - Bird, J. P.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

N1 - Funding Information: This study was supported by the Ministry of Education and Science of the Russian Federation (grant no. E02-3.4-319) and the State contract no. 40.012.1.1.1153.

PY - 2007/3

Y1 - 2007/3

N2 - The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

AB - The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

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DO - 10.1134/S1063782607030165

M3 - Article

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SP - 327

EP - 334

JO - Semiconductors

JF - Semiconductors

IS - 3

ER -

Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

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