Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

V. I. Kadushkin, Yu G. Sadof'ev, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

Original languageEnglish (US)
Pages (from-to)327-334
Number of pages8
JournalSemiconductors
Volume41
Issue number3
DOIs
StatePublished - Mar 1 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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