Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

V. I. Kadushkin, Yu G. Sadof'ev, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticle

Abstract

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

Original languageEnglish (US)
Pages (from-to)327-334
Number of pages8
JournalSemiconductors
Volume41
Issue number3
DOIs
StatePublished - Mar 2007

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Electron-electron interactions
Semiconductor quantum wells
electron scattering
Modulation
quantum wells
Magnetic fields
modulation
Amplitude modulation
Electrons
Frequency modulation
Magnetoresistance
magnetic fields
oscillations
electrons
frequency modulation
anomalies
collisions
thresholds
Temperature
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field. / Kadushkin, V. I.; Sadof'ev, Yu G.; Bird, J. P.; Johnson, Shane; Zhang, Yong-Hang.

In: Semiconductors, Vol. 41, No. 3, 03.2007, p. 327-334.

Research output: Contribution to journalArticle

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AB - The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm-2.

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