Resonance effects in RHEED on GaAs(110) surface

J. M. Zuo; Jingyue Liu

doi:10.1016/0039-6028(92)90881-6

Resonance effects in RHEED on GaAs(110) surface

J. M. Zuo, Jingyue Liu

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6 Scopus citations

Abstract

We have studied the RHEED resonance condition on the GaAs(110) surface near the (880) and (620) Bragg conditions. The resonance intensity has been measured, using an energy filtering device which excludes inelastically scattered electrons involving energy losses greater than 2.5 eV. These measured intensities are compared with simulated ones using the Bloch wave method. It is found that the anomalous intensity enhancement at the resonance condition is due to the multiple scattering in the top surface atomic layers, and the surface potential barrier may effect the magnitude of the intensity enhancement. Resonance occurs when there is a Bloch wave that has a very small penetration depth into the bulk crystal, and this Bloch wave is strongly excited.

Original language	English (US)
Pages (from-to)	253-259
Number of pages	7
Journal	Surface Science
Volume	271
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(92)90881-6
State	Published - 1992

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)90881-6

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@article{8775d127fc4d47769e658b3a312d35ac,

title = "Resonance effects in RHEED on GaAs(110) surface",

abstract = "We have studied the RHEED resonance condition on the GaAs(110) surface near the (880) and (620) Bragg conditions. The resonance intensity has been measured, using an energy filtering device which excludes inelastically scattered electrons involving energy losses greater than 2.5 eV. These measured intensities are compared with simulated ones using the Bloch wave method. It is found that the anomalous intensity enhancement at the resonance condition is due to the multiple scattering in the top surface atomic layers, and the surface potential barrier may effect the magnitude of the intensity enhancement. Resonance occurs when there is a Bloch wave that has a very small penetration depth into the bulk crystal, and this Bloch wave is strongly excited.",

author = "Zuo, {J. M.} and Jingyue Liu",

note = "Funding Information: This work is supportedb y NSF grant nt} DMR9{}-1586a7 nd the NSF-AnzonaS tateUm-versityN ationaCl enterf or High ResolutionE lec-tron MicroscopyT. he author(J .M. Zuo) acknowl-edgesm anyuseful discussionos n the theoryo f reflectionh igh-energeyl ectrond iffractionw ith Dr. P. Rez. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1992",

doi = "10.1016/0039-6028(92)90881-6",

language = "English (US)",

volume = "271",

pages = "253--259",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Resonance effects in RHEED on GaAs(110) surface

AU - Zuo, J. M.

AU - Liu, Jingyue

N1 - Funding Information: This work is supportedb y NSF grant nt} DMR9{}-1586a7 nd the NSF-AnzonaS tateUm-versityN ationaCl enterf or High ResolutionE lec-tron MicroscopyT. he author(J .M. Zuo) acknowl-edgesm anyuseful discussionos n the theoryo f reflectionh igh-energeyl ectrond iffractionw ith Dr. P. Rez. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992

Y1 - 1992

N2 - We have studied the RHEED resonance condition on the GaAs(110) surface near the (880) and (620) Bragg conditions. The resonance intensity has been measured, using an energy filtering device which excludes inelastically scattered electrons involving energy losses greater than 2.5 eV. These measured intensities are compared with simulated ones using the Bloch wave method. It is found that the anomalous intensity enhancement at the resonance condition is due to the multiple scattering in the top surface atomic layers, and the surface potential barrier may effect the magnitude of the intensity enhancement. Resonance occurs when there is a Bloch wave that has a very small penetration depth into the bulk crystal, and this Bloch wave is strongly excited.

AB - We have studied the RHEED resonance condition on the GaAs(110) surface near the (880) and (620) Bragg conditions. The resonance intensity has been measured, using an energy filtering device which excludes inelastically scattered electrons involving energy losses greater than 2.5 eV. These measured intensities are compared with simulated ones using the Bloch wave method. It is found that the anomalous intensity enhancement at the resonance condition is due to the multiple scattering in the top surface atomic layers, and the surface potential barrier may effect the magnitude of the intensity enhancement. Resonance occurs when there is a Bloch wave that has a very small penetration depth into the bulk crystal, and this Bloch wave is strongly excited.

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U2 - 10.1016/0039-6028(92)90881-6

DO - 10.1016/0039-6028(92)90881-6

M3 - Article

AN - SCOPUS:0026869212

SN - 0039-6028

VL - 271

SP - 253

EP - 259

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Resonance effects in RHEED on GaAs(110) surface

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