Resistive switching random access memory - Materials, device, interconnects, and scaling considerations

Yi Wu, Jiale Liang, Shimeng Yu, Ximeng Guan, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we review recent progresses on metal oxide resistive switching memory (RRAM). RRAM device design is explored from different aspects including oxide/electrode materials, uniformity issues, and scaling down to single-digit-nm regime. We studied the stochastic nature of resistive switching in metal oxide RRAM and revealed the physics behind switching parameter variations in HfOx-based RRAM using a 2D analytical solver. In a forward-looking analysis into the sub-10 nm regime, we investigated the impact of wordline/bitline metal wire scaling on the read/write performance, energy consumption in the cross-point memory array architecture.

Original languageEnglish (US)
Title of host publicationIEEE International Integrated Reliability Workshop Final Report
Pages16-21
Number of pages6
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 IEEE International Integrated Reliability Workshop, IIRW 2012 - South Lake Tahoe, CA, United States
Duration: Oct 14 2012Oct 18 2012

Other

Other2012 IEEE International Integrated Reliability Workshop, IIRW 2012
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/14/1210/18/12

Fingerprint

Oxides
Data storage equipment
Metals
Energy utilization
Physics
Wire
Electrodes
RRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, Y., Liang, J., Yu, S., Guan, X., & Wong, H. S. P. (2012). Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. In IEEE International Integrated Reliability Workshop Final Report (pp. 16-21). [6468906] https://doi.org/10.1109/IIRW.2012.6468906

Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. / Wu, Yi; Liang, Jiale; Yu, Shimeng; Guan, Ximeng; Wong, H. S Philip.

IEEE International Integrated Reliability Workshop Final Report. 2012. p. 16-21 6468906.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, Y, Liang, J, Yu, S, Guan, X & Wong, HSP 2012, Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. in IEEE International Integrated Reliability Workshop Final Report., 6468906, pp. 16-21, 2012 IEEE International Integrated Reliability Workshop, IIRW 2012, South Lake Tahoe, CA, United States, 10/14/12. https://doi.org/10.1109/IIRW.2012.6468906
Wu Y, Liang J, Yu S, Guan X, Wong HSP. Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. In IEEE International Integrated Reliability Workshop Final Report. 2012. p. 16-21. 6468906 https://doi.org/10.1109/IIRW.2012.6468906
Wu, Yi ; Liang, Jiale ; Yu, Shimeng ; Guan, Ximeng ; Wong, H. S Philip. / Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. IEEE International Integrated Reliability Workshop Final Report. 2012. pp. 16-21
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