Resistive switching random access memory - Materials, device, interconnects, and scaling considerations

Yi Wu, Jiale Liang, Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we review recent progresses on metal oxide resistive switching memory (RRAM). RRAM device design is explored from different aspects including oxide/electrode materials, uniformity issues, and scaling down to single-digit-nm regime. We studied the stochastic nature of resistive switching in metal oxide RRAM and revealed the physics behind switching parameter variations in HfOx-based RRAM using a 2D analytical solver. In a forward-looking analysis into the sub-10 nm regime, we investigated the impact of wordline/bitline metal wire scaling on the read/write performance, energy consumption in the cross-point memory array architecture.

Original languageEnglish (US)
Title of host publication2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012
Pages16-21
Number of pages6
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Integrated Reliability Workshop, IIRW 2012 - South Lake Tahoe, CA, United States
Duration: Oct 14 2012Oct 18 2012

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2012 IEEE International Integrated Reliability Workshop, IIRW 2012
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/14/1210/18/12

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, Y., Liang, J., Yu, S., Guan, X., & Wong, H. S. P. (2012). Resistive switching random access memory - Materials, device, interconnects, and scaling considerations. In 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012 (pp. 16-21). [6468906] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2012.6468906