Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip C.H. Chan, Ali Javey, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages9.3.1-9.3.4
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Chai, Y., Wu, Y., Takei, K., Chen, H. Y., Yu, S., Chan, P. C. H., Javey, A., & Wong, H. S. P. (2010). Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 9.3.1-9.3.4). [5703328] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703328