Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai; Yi Wu; Kuniharu Takei; Hong Yu Chen; Shimeng Yu; Philip C.H. Chan; Ali Javey; H. S.Philip Wong

doi:10.1109/IEDM.2010.5703328

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip C.H. Chan, Ali Javey, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm²), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

Original language	English (US)
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	9.3.1-9.3.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703328
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: Dec 6 2010 → Dec 8 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	12/6/10 → 12/8/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703328

Cite this

Chai, Y., Wu, Y., Takei, K., Chen, H. Y., Yu, S., Chan, P. C. H., Javey, A., & Wong, H. S. P. (2010). Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 9.3.1-9.3.4). Article 5703328 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703328

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. / Chai, Yang; Wu, Yi; Takei, Kuniharu et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 9.3.1-9.3.4 5703328 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chai, Y, Wu, Y, Takei, K, Chen, HY, Yu, S, Chan, PCH, Javey, A & Wong, HSP 2010, Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703328, Technical Digest - International Electron Devices Meeting, IEDM, pp. 9.3.1-9.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703328

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AB - We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

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Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Abstract

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