Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip C H Chan, Ali Javey, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

Fingerprint

Carbon Nanotubes
Carbon nanotubes
Carbon
carbon nanotubes
Amorphous carbon
Data storage equipment
Electrodes
electrodes
carbon
RRAM
cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Chai, Y., Wu, Y., Takei, K., Chen, H. Y., Yu, S., Chan, P. C. H., ... Wong, H. S. P. (2010). Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. In Technical Digest - International Electron Devices Meeting, IEDM [5703328] https://doi.org/10.1109/IEDM.2010.5703328

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. / Chai, Yang; Wu, Yi; Takei, Kuniharu; Chen, Hong Yu; Yu, Shimeng; Chan, Philip C H; Javey, Ali; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chai, Y, Wu, Y, Takei, K, Chen, HY, Yu, S, Chan, PCH, Javey, A & Wong, HSP 2010, Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. in Technical Digest - International Electron Devices Meeting, IEDM., 5703328, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703328
Chai Y, Wu Y, Takei K, Chen HY, Yu S, Chan PCH et al. Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. In Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703328 https://doi.org/10.1109/IEDM.2010.5703328
Chai, Yang ; Wu, Yi ; Takei, Kuniharu ; Chen, Hong Yu ; Yu, Shimeng ; Chan, Philip C H ; Javey, Ali ; Wong, H. S Philip. / Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
@inproceedings{1d847bf9ecbc42ddb8a1b4463eb9546d,
title = "Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory",
abstract = "We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.",
author = "Yang Chai and Yi Wu and Kuniharu Takei and Chen, {Hong Yu} and Shimeng Yu and Chan, {Philip C H} and Ali Javey and Wong, {H. S Philip}",
year = "2010",
doi = "10.1109/IEDM.2010.5703328",
language = "English (US)",
isbn = "9781424474196",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

AU - Chai, Yang

AU - Wu, Yi

AU - Takei, Kuniharu

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Chan, Philip C H

AU - Javey, Ali

AU - Wong, H. S Philip

PY - 2010

Y1 - 2010

N2 - We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

AB - We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

UR - http://www.scopus.com/inward/record.url?scp=79951820745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951820745&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703328

DO - 10.1109/IEDM.2010.5703328

M3 - Conference contribution

AN - SCOPUS:79951820745

SN - 9781424474196

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -