Abstract

Solid electrolytes such as Agy(GexSe 1-x)1-y allow rapid diffusion of metal ions and this makes them suitable for memory applications. The switching mechanism in these materials is based on cation migration from an oxidizable electrode (e.g., Ag) under positive bias and the reduction of the metal ions at the counter electrode (e.g., Pt). A metallic connection forms between the electrodes which is stable when the voltage is switched off but can be dissolved when the voltage polarity is reversed. We present our results on resistive switching in Ag/Ag-Ge-Se/Pt cells which can show a resistance ratio of more than 5 orders of magnitude. The ON resistance depends on the write current which allows for multi-bit data storage. The leakage current in the high resistance state can significantly be reduced by introducing an oxide layer within the chalcogenide film. Then, a current as low as 1 nA is sufficient to switch these cells from a high to a low resistance state demonstrating the possibility of extremely low power consumption.

Original languageEnglish (US)
Title of host publicationProceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07
Pages82-85
Number of pages4
StatePublished - 2007
Event8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07 - Albuquerque, NM, United States
Duration: Nov 10 2007Nov 13 2007

Other

Other8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07
CountryUnited States
CityAlbuquerque, NM
Period11/10/0711/13/07

Fingerprint

Electrodes
Metal ions
Data storage equipment
Solid electrolytes
Electric potential
Leakage currents
Electric power utilization
Positive ions
Switches
Oxides

Keywords

  • Cation migration
  • Non-volatile memory
  • Resistive switching
  • Solid electrolyte

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Schindler, C., Meier, M., Waser, R., & Kozicki, M. (2007). Resistive switching in Ag-Ge-Se with extremely low write currents. In Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07 (pp. 82-85). [4389953]

Resistive switching in Ag-Ge-Se with extremely low write currents. / Schindler, C.; Meier, M.; Waser, R.; Kozicki, Michael.

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. p. 82-85 4389953.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schindler, C, Meier, M, Waser, R & Kozicki, M 2007, Resistive switching in Ag-Ge-Se with extremely low write currents. in Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07., 4389953, pp. 82-85, 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07, Albuquerque, NM, United States, 11/10/07.
Schindler C, Meier M, Waser R, Kozicki M. Resistive switching in Ag-Ge-Se with extremely low write currents. In Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. p. 82-85. 4389953
Schindler, C. ; Meier, M. ; Waser, R. ; Kozicki, Michael. / Resistive switching in Ag-Ge-Se with extremely low write currents. Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07. 2007. pp. 82-85
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N2 - Solid electrolytes such as Agy(GexSe 1-x)1-y allow rapid diffusion of metal ions and this makes them suitable for memory applications. The switching mechanism in these materials is based on cation migration from an oxidizable electrode (e.g., Ag) under positive bias and the reduction of the metal ions at the counter electrode (e.g., Pt). A metallic connection forms between the electrodes which is stable when the voltage is switched off but can be dissolved when the voltage polarity is reversed. We present our results on resistive switching in Ag/Ag-Ge-Se/Pt cells which can show a resistance ratio of more than 5 orders of magnitude. The ON resistance depends on the write current which allows for multi-bit data storage. The leakage current in the high resistance state can significantly be reduced by introducing an oxide layer within the chalcogenide film. Then, a current as low as 1 nA is sufficient to switch these cells from a high to a low resistance state demonstrating the possibility of extremely low power consumption.

AB - Solid electrolytes such as Agy(GexSe 1-x)1-y allow rapid diffusion of metal ions and this makes them suitable for memory applications. The switching mechanism in these materials is based on cation migration from an oxidizable electrode (e.g., Ag) under positive bias and the reduction of the metal ions at the counter electrode (e.g., Pt). A metallic connection forms between the electrodes which is stable when the voltage is switched off but can be dissolved when the voltage polarity is reversed. We present our results on resistive switching in Ag/Ag-Ge-Se/Pt cells which can show a resistance ratio of more than 5 orders of magnitude. The ON resistance depends on the write current which allows for multi-bit data storage. The leakage current in the high resistance state can significantly be reduced by introducing an oxide layer within the chalcogenide film. Then, a current as low as 1 nA is sufficient to switch these cells from a high to a low resistance state demonstrating the possibility of extremely low power consumption.

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