Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

Yuanqing Chen, Lingwei Li, Xiaoru Yin, Aditya Yerramilli, Yuxia Shen, Yang Song, Weibai Bian, Na Li, Zhao Zhao, Wenwen Qu, N. David Theodore, Terry Alford

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.

Original languageEnglish (US)
Article number8049388
Pages (from-to)1528-1531
Number of pages4
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 2017


  • Titanium oxide
  • deep ultraviolet irradiation
  • resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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