Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

Yuanqing Chen; Lingwei Li; Xiaoru Yin; Aditya Yerramilli; Yuxia Shen; Yang Song; Weibai Bian; Na Li; Zhao Zhao; Wenwen Qu; N. David Theodore; Terry Alford

doi:10.1109/LED.2017.2756444

Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

Yuanqing Chen, Lingwei Li, Xiaoru Yin, Aditya Yerramilli, Yuxia Shen, Yang Song, Weibai Bian, Na Li, Zhao Zhao, Wenwen Qu, N. David Theodore, Terry Alford

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A novel ultraviolet photochemical method was used to prepare TiO₂ resistive-switching films. Amorphous TiO₂ films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO₂/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.

Original language	English (US)
Article number	8049388
Pages (from-to)	1528-1531
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	11
DOIs	https://doi.org/10.1109/LED.2017.2756444
State	Published - Nov 2017

Keywords

Titanium oxide
deep ultraviolet irradiation
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2017.2756444

Cite this

@article{55331837aa2b467fb71846cb01226497,

title = "Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method",

abstract = "A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.",

keywords = "Titanium oxide, deep ultraviolet irradiation, resistive switching",

author = "Yuanqing Chen and Lingwei Li and Xiaoru Yin and Aditya Yerramilli and Yuxia Shen and Yang Song and Weibai Bian and Na Li and Zhao Zhao and Wenwen Qu and Theodore, {N. David} and Terry Alford",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = nov,

doi = "10.1109/LED.2017.2756444",

language = "English (US)",

volume = "38",

pages = "1528--1531",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

AU - Chen, Yuanqing

AU - Li, Lingwei

AU - Yin, Xiaoru

AU - Yerramilli, Aditya

AU - Shen, Yuxia

AU - Song, Yang

AU - Bian, Weibai

AU - Li, Na

AU - Zhao, Zhao

AU - Qu, Wenwen

AU - Theodore, N. David

AU - Alford, Terry

PY - 2017/11

Y1 - 2017/11

N2 - A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.

AB - A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.

KW - Titanium oxide

KW - deep ultraviolet irradiation

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85030774448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030774448&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2756444

DO - 10.1109/LED.2017.2756444

M3 - Article

AN - SCOPUS:85030774448

SN - 0741-3106

VL - 38

SP - 1528

EP - 1531

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 8049388

ER -