Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

Yuanqing Chen, Lingwei Li, Xiaoru Yin, Aditya Yerramilli, Yuxia Shen, Yang Song, Weibai Bian, Na Li, Zhao Zhao, Wenwen Qu, N. David Theodore, Terry Alford

Research output: Contribution to journalArticle

  • 3 Citations

Abstract

A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability.

LanguageEnglish (US)
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - Sep 23 2017

Fingerprint

Thin films
Polyethylene Terephthalates
Tin oxides
Polyethylene terephthalates
Indium
Switches
Amorphous films
Irradiation
Data storage equipment
Substrates
indium tin oxide

Keywords

  • deep ultraviolet irradiation
  • resistive switching
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method. / Chen, Yuanqing; Li, Lingwei; Yin, Xiaoru; Yerramilli, Aditya; Shen, Yuxia; Song, Yang; Bian, Weibai; Li, Na; Zhao, Zhao; Qu, Wenwen; Theodore, N. David; Alford, Terry.

In: IEEE Electron Device Letters, 23.09.2017.

Research output: Contribution to journalArticle

Chen, Yuanqing ; Li, Lingwei ; Yin, Xiaoru ; Yerramilli, Aditya ; Shen, Yuxia ; Song, Yang ; Bian, Weibai ; Li, Na ; Zhao, Zhao ; Qu, Wenwen ; Theodore, N. David ; Alford, Terry. / Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method. In: IEEE Electron Device Letters. 2017.
@article{55331837aa2b467fb71846cb01226497,
title = "Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method",
abstract = "A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability.",
keywords = "deep ultraviolet irradiation, resistive switching, Titanium oxide",
author = "Yuanqing Chen and Lingwei Li and Xiaoru Yin and Aditya Yerramilli and Yuxia Shen and Yang Song and Weibai Bian and Na Li and Zhao Zhao and Wenwen Qu and Theodore, {N. David} and Terry Alford",
year = "2017",
month = "9",
day = "23",
doi = "10.1109/LED.2017.2756444",
language = "English (US)",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

AU - Chen, Yuanqing

AU - Li, Lingwei

AU - Yin, Xiaoru

AU - Yerramilli, Aditya

AU - Shen, Yuxia

AU - Song, Yang

AU - Bian, Weibai

AU - Li, Na

AU - Zhao, Zhao

AU - Qu, Wenwen

AU - Theodore, N. David

AU - Alford, Terry

PY - 2017/9/23

Y1 - 2017/9/23

N2 - A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability.

AB - A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability.

KW - deep ultraviolet irradiation

KW - resistive switching

KW - Titanium oxide

UR - http://www.scopus.com/inward/record.url?scp=85030774448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030774448&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2756444

DO - 10.1109/LED.2017.2756444

M3 - Article

JO - IEEE Electron Device Letters

T2 - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

ER -