Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

Yuanqing Chen, Lingwei Li, Xiaoru Yin, Aditya Yerramilli, Yuxia Shen, Yang Song, Weibai Bian, Na Li, Zhao Zhao, Wenwen Qu, N. David Theodore, Terry Alford

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability.

Original languageEnglish (US)
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - Sep 23 2017

Keywords

  • deep ultraviolet irradiation
  • resistive switching
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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