Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Yi Wu, Yang Chai, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages26-27
Number of pages2
StatePublished - 2011
Externally publishedYes
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: Jun 14 2011Jun 16 2011

Other

Other2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period6/14/116/16/11

Fingerprint

Carbon nanotubes
Data storage equipment
Electrodes
Switches
RRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wu, Y., Chai, Y., Chen, H. Y., Yu, S., & Wong, H. S. P. (2011). Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 26-27). [5984616]

Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. / Wu, Yi; Chai, Yang; Chen, Hong Yu; Yu, Shimeng; Wong, H. S Philip.

Digest of Technical Papers - Symposium on VLSI Technology. 2011. p. 26-27 5984616.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, Y, Chai, Y, Chen, HY, Yu, S & Wong, HSP 2011, Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. in Digest of Technical Papers - Symposium on VLSI Technology., 5984616, pp. 26-27, 2011 Symposium on VLSI Technology, VLSIT 2011, Kyoto, Japan, 6/14/11.
Wu Y, Chai Y, Chen HY, Yu S, Wong HSP. Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. In Digest of Technical Papers - Symposium on VLSI Technology. 2011. p. 26-27. 5984616
Wu, Yi ; Chai, Yang ; Chen, Hong Yu ; Yu, Shimeng ; Wong, H. S Philip. / Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. Digest of Technical Papers - Symposium on VLSI Technology. 2011. pp. 26-27
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