@inproceedings{11eddcfa42d847b89cb9865aaf66a111,
title = "Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application",
abstract = "We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.",
author = "Yi Wu and Yang Chai and Chen, {Hong Yu} and Shimeng Yu and Wong, {H. S.Philip}",
year = "2011",
language = "English (US)",
isbn = "9784863481640",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "26--27",
booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",
note = "2011 Symposium on VLSI Technology, VLSIT 2011 ; Conference date: 14-06-2011 Through 16-06-2011",
}