Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Yi Wu, Yang Chai, Hong Yu Chen, Shimeng Yu, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.

Original languageEnglish (US)
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages26-27
Number of pages2
StatePublished - Sep 16 2011
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: Jun 14 2011Jun 16 2011

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period6/14/116/16/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application'. Together they form a unique fingerprint.

  • Cite this

    Wu, Y., Chai, Y., Chen, H. Y., Yu, S., & Wong, H. S. P. (2011). Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. In 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers (pp. 26-27). [5984616] (Digest of Technical Papers - Symposium on VLSI Technology).