Abstract

Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed to converge with increasing particle fluence. After reaching a 14 MeV neutron fluence of $2.93 × 1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state. In situ testing during heavy ion exposure showed a steady decrease in the resistance state of each cell with each successive exposure to the beam. The devices eventually became locked in an LRS.

Original languageEnglish (US)
Article number7847370
Pages (from-to)2300-2306
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number8
DOIs
StatePublished - Aug 1 2017

Fingerprint

random access memory
locking
damage
Data storage equipment
cells
Neutrons
fluence
low resistance
Experiments
Heavy ions
neutrons
high resistance
heavy ions
Ions
Testing
ions

Keywords

  • Cation
  • chalcogenide glass
  • conductive bridging
  • conductive bridging random access memory (CBRAM)
  • displacement damage
  • electrochemical metallization
  • heavy ion
  • ion beam
  • memristors
  • nanoionic memory
  • neutrons
  • programmable metallization cell
  • radiation effects
  • resistive random access memory
  • resistive switching

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Pacheco, J. L., ... Mitkova, M. (2017). Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects. IEEE Transactions on Nuclear Science, 64(8), 2300-2306. [7847370]. https://doi.org/10.1109/TNS.2017.2666147

Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects. / Taggart, J. L.; Fang, R.; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Pacheco, J. L.; Bielejec, E. S.; McLain, M. L.; Chamele, N.; Mahmud, A.; Mitkova, M.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 8, 7847370, 01.08.2017, p. 2300-2306.

Research output: Contribution to journalArticle

Taggart, JL, Fang, R, Gonzalez Velo, Y, Barnaby, H, Kozicki, M, Pacheco, JL, Bielejec, ES, McLain, ML, Chamele, N, Mahmud, A & Mitkova, M 2017, 'Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects', IEEE Transactions on Nuclear Science, vol. 64, no. 8, 7847370, pp. 2300-2306. https://doi.org/10.1109/TNS.2017.2666147
Taggart, J. L. ; Fang, R. ; Gonzalez Velo, Yago ; Barnaby, Hugh ; Kozicki, Michael ; Pacheco, J. L. ; Bielejec, E. S. ; McLain, M. L. ; Chamele, N. ; Mahmud, A. ; Mitkova, M. / Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects. In: IEEE Transactions on Nuclear Science. 2017 ; Vol. 64, No. 8. pp. 2300-2306.
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