Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, Peter Bennett

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have measured electrical resistance of individual epitaxial CoSi 2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 107 Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi 2 films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface.

Original languageEnglish (US)
Pages (from-to)362-366
Number of pages5
Journale-Journal of Surface Science and Nanotechnology
Volume3
DOIs
StatePublished - Dec 3 2005

Keywords

  • Cobalt
  • Electrical transport
  • Multi-probe method
  • Multi-tip scanning tunneling microscope
  • Nano-wires
  • Si(110)
  • Silicides

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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