Reply to "Comment on 'A unified explanation for secondary ion yields' and 'Mechanism of the SIMS matrix effect"'

Peter Williams, V. R. Deline, C. A. Evans, W. Katz

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Comments made in the preceding paper are critically discussed. It is argued that conclusions reached in our earlier papers were conservative and justified within our experimental accuracy. Negative-ion yields under cesium bombardment scale with surface cesium concentration and electron affinity in a manner analogous to the scaling of positive-ion yields with surface oxygen concentration and ionization potential. Fluorine is shown to be an exception, due probably to saturation effects.

Original languageEnglish (US)
Pages (from-to)530-532
Number of pages3
JournalJournal of Applied Physics
Volume52
Issue number1
DOIs
StatePublished - 1981
Externally publishedYes

Fingerprint

cesium
secondary ion mass spectrometry
matrices
electron affinity
positive ions
ionization potentials
negative ions
fluorine
affinity
bombardment
ions
saturation
scaling
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reply to "Comment on 'A unified explanation for secondary ion yields' and 'Mechanism of the SIMS matrix effect"'. / Williams, Peter; Deline, V. R.; Evans, C. A.; Katz, W.

In: Journal of Applied Physics, Vol. 52, No. 1, 1981, p. 530-532.

Research output: Contribution to journalArticle

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