Removal of surface states on Si(1 0 0) by valence-mending passivation

Engineering & Materials Science

• Surface states 100%
• Passivation 84%
• Semiconductor materials 37%
• Monolayers 36%
• Atoms 28%
• Sulfur 26%
• Molecular beam epitaxy 21%
• Ohmic contacts 21%
• Epitaxial growth 19%
• Metals 17%
• Chemical vapor deposition 16%
• Optoelectronic devices 16%
• Energy gap 15%
• Chemical properties 15%
• Electric properties 14%
• Thermodynamic stability 14%
• Grain boundaries 14%
• Annealing 13%
• Diodes 12%
• Substrates 9%

Chemical Compounds

• Surface State 82%
• Schottky Barrier 76%
• Chemical Passivation 70%
• Chalcogen 34%
• Semiconductor 31%
• Surface 22%
• Monolayer 20%
• Molecular Beam Epitaxy 19%
• Epitaxial Growth 16%
• Grain Boundary 14%
• Optoelectronics 12%
• Metal 12%
• Chemical Vapour Deposition 12%
• Electrical Property 11%
• Annealing 10%
• Band Gap 10%
• Thermal Stability 9%
• Application 4%

Physics & Astronomy

• passivity 64%
• valence 51%
• sulfur 16%
• dating 11%
• chemical properties 9%
• p-n junctions 8%
• metals 8%
• atoms 8%
• epitaxy 8%
• electric contacts 7%
• thermal stability 7%
• molecular beam epitaxy 7%
• vapor deposition 6%
• diodes 6%
• grain boundaries 6%
• electrical properties 6%
• annealing 5%