Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Meng Tao; Darshak Udeshi; Nasir Basit; Eduardo Maldonado; Wiley P. Kirk

doi:10.1063/1.1559418

Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Meng Tao, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The electrical properties of magnesium contacts on selenium passivated silicon (001) were reported. It was observed that the magnesium contacts on selenium-passivated silicon (001) behaves ohmically. It was found that the magnesium contacts on selenium-passivated silicon show better thermal stability than on hydrogen-passivated silicon (001) after different annealing.

Original language	English (US)
Pages (from-to)	1559-1561
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	10
DOIs	https://doi.org/10.1063/1.1559418
State	Published - Mar 10 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1559418

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title = "Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium",

abstract = "The electrical properties of magnesium contacts on selenium passivated silicon (001) were reported. It was observed that the magnesium contacts on selenium-passivated silicon (001) behaves ohmically. It was found that the magnesium contacts on selenium-passivated silicon show better thermal stability than on hydrogen-passivated silicon (001) after different annealing.",

author = "Meng Tao and Darshak Udeshi and Nasir Basit and Eduardo Maldonado and Kirk, {Wiley P.}",

year = "2003",

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AU - Tao, Meng

AU - Udeshi, Darshak

AU - Basit, Nasir

AU - Maldonado, Eduardo

AU - Kirk, Wiley P.

PY - 2003/3/10

Y1 - 2003/3/10

N2 - The electrical properties of magnesium contacts on selenium passivated silicon (001) were reported. It was observed that the magnesium contacts on selenium-passivated silicon (001) behaves ohmically. It was found that the magnesium contacts on selenium-passivated silicon show better thermal stability than on hydrogen-passivated silicon (001) after different annealing.

AB - The electrical properties of magnesium contacts on selenium passivated silicon (001) were reported. It was observed that the magnesium contacts on selenium-passivated silicon (001) behaves ohmically. It was found that the magnesium contacts on selenium-passivated silicon show better thermal stability than on hydrogen-passivated silicon (001) after different annealing.

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DO - 10.1063/1.1559418

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Abstract

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