Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

Meng Tao, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, Wiley P. Kirk

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Abstract

The electrical properties of magnesium contacts on selenium passivated silicon (001) were reported. It was observed that the magnesium contacts on selenium-passivated silicon (001) behaves ohmically. It was found that the magnesium contacts on selenium-passivated silicon show better thermal stability than on hydrogen-passivated silicon (001) after different annealing.

Original languageEnglish (US)
Pages (from-to)1559-1561
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number10
DOIs
Publication statusPublished - Mar 10 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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