REMOTE POLAR PHONON SCATTERING IN Si INVERSION LAYERS.

B. T. Moore, D. K. Ferry

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The effects upon the drift velocity and electron temperatures in silicon inversion layers due to interfacial polar-mode phonons in the Si/SiO//2 interface have been computed at various temperatures. These calculations were carried out at 77, 150, and 300 K using a three-energy-level model for transport in the quasi-two-dimensional inversion layer assuming a drifted-Maxwellian distribution. The effects of the polar interface phonon scattering are compared to the effects of scattering due to Si bulk phonons, interface charges, and interface roughness. The effects of the remote phonons are shown to be small in the drift velocity, but significant as an energy relaxation mechanism at high fields and large inversion densities.

Original languageEnglish (US)
Pages (from-to)2603-2605
Number of pages3
JournalJournal of Applied Physics
Volume51
Issue number5
DOIs
StatePublished - May 1980
Externally publishedYes

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phonons
inversions
scattering
Maxwell-Boltzmann density function
roughness
energy levels
electron energy
temperature
silicon
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

REMOTE POLAR PHONON SCATTERING IN Si INVERSION LAYERS. / Moore, B. T.; Ferry, D. K.

In: Journal of Applied Physics, Vol. 51, No. 5, 05.1980, p. 2603-2605.

Research output: Contribution to journalArticle

Moore, B. T. ; Ferry, D. K. / REMOTE POLAR PHONON SCATTERING IN Si INVERSION LAYERS. In: Journal of Applied Physics. 1980 ; Vol. 51, No. 5. pp. 2603-2605.
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