Remote polar phonon scattering in Si inversion layers

B. T. Moore; D. K. Ferry

doi:10.1063/1.327988

Remote polar phonon scattering in Si inversion layers

B. T. Moore, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The effects upon the drift velocity and electron temperatures in silicon inversion layers due to interfacial polar-mode phonons in the Si/SiO₂ interface have been calculated at various temperatures. These calculations were carried out at 77, 150, and 300 K using a three-energy-level model for transport in the quasi-two-dimensional inversion layer assuming a drifted-Maxwellian distribution. The effects of the polar interface phonon scattering are compared to the effects of scattering due to Si bulk phonons, interface charges, and interface roughness. The effects of the remote phonons are found to be small in the drift velocity, but are significant as an energy relaxation mechanism at high fields and large inversion densities.

Original language	English (US)
Pages (from-to)	2603-2605
Number of pages	3
Journal	Journal of Applied Physics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1063/1.327988
State	Published - 1980
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.327988

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@article{1daf8346fddf4921abe99871c2426281,

title = "Remote polar phonon scattering in Si inversion layers",

abstract = "The effects upon the drift velocity and electron temperatures in silicon inversion layers due to interfacial polar-mode phonons in the Si/SiO2 interface have been calculated at various temperatures. These calculations were carried out at 77, 150, and 300 K using a three-energy-level model for transport in the quasi-two-dimensional inversion layer assuming a drifted-Maxwellian distribution. The effects of the polar interface phonon scattering are compared to the effects of scattering due to Si bulk phonons, interface charges, and interface roughness. The effects of the remote phonons are found to be small in the drift velocity, but are significant as an energy relaxation mechanism at high fields and large inversion densities.",

author = "Moore, {B. T.} and Ferry, {D. K.}",

year = "1980",

doi = "10.1063/1.327988",

language = "English (US)",

volume = "51",

pages = "2603--2605",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Remote polar phonon scattering in Si inversion layers

AU - Moore, B. T.

AU - Ferry, D. K.

PY - 1980

Y1 - 1980

N2 - The effects upon the drift velocity and electron temperatures in silicon inversion layers due to interfacial polar-mode phonons in the Si/SiO2 interface have been calculated at various temperatures. These calculations were carried out at 77, 150, and 300 K using a three-energy-level model for transport in the quasi-two-dimensional inversion layer assuming a drifted-Maxwellian distribution. The effects of the polar interface phonon scattering are compared to the effects of scattering due to Si bulk phonons, interface charges, and interface roughness. The effects of the remote phonons are found to be small in the drift velocity, but are significant as an energy relaxation mechanism at high fields and large inversion densities.

AB - The effects upon the drift velocity and electron temperatures in silicon inversion layers due to interfacial polar-mode phonons in the Si/SiO2 interface have been calculated at various temperatures. These calculations were carried out at 77, 150, and 300 K using a three-energy-level model for transport in the quasi-two-dimensional inversion layer assuming a drifted-Maxwellian distribution. The effects of the polar interface phonon scattering are compared to the effects of scattering due to Si bulk phonons, interface charges, and interface roughness. The effects of the remote phonons are found to be small in the drift velocity, but are significant as an energy relaxation mechanism at high fields and large inversion densities.

UR - http://www.scopus.com/inward/record.url?scp=0019016046&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019016046&partnerID=8YFLogxK

U2 - 10.1063/1.327988

DO - 10.1063/1.327988

M3 - Article

AN - SCOPUS:0019016046

SN - 0021-8979

VL - 51

SP - 2603

EP - 2605

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Remote polar phonon scattering in Si inversion layers

Abstract

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