Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material

Charles B. Morrison, Joseph C. Boisvert, Rengarajan Sudharsanan, Moran Haddad, Takahiro Isshiki, Dmitri D. Krut, Richard King, Nasser H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low cost germanium photodetectors for sensing applications in the 900-1600 nm spectral region have been developed. By varying the Ge substrate resistivity as well as device area, photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Low leakage current devices of various sizes up to 1 cm 2 have been fabricated and have consistently exhibited exceptionally high shunt resistances and excellent linearity. Over 5000 hours of active stress testing have left the ultra-low leakage currents unchanged. These data were measured in accordance with Telcordia 468-CORE requirements at 85°C, 125°C and 175°C. The results indicate that these mesa photodetectors meet telecommunication industry requirements for reliability. These devices are comparable to commercially available Ge photodetectors, and can be readily substituted for more complex InGaAs photo-detectors in applications such as laser monitor diodes.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.E. Longshore, S. Sivananthan
Pages125-132
Number of pages8
Volume5209
StatePublished - 2003
Externally publishedYes
EventMaterials for Infrared Detectors III - San Diego, CA, United States
Duration: Aug 7 2003Aug 8 2003

Other

OtherMaterials for Infrared Detectors III
CountryUnited States
CitySan Diego, CA
Period8/7/038/8/03

Fingerprint

Photodetectors
Germanium
photometers
germanium
Leakage currents
leakage
shunts
Telecommunication industry
requirements
mesas
linearity
monitors
telecommunication
Diodes
Capacitance
capacitance
industries
diodes
Detectors
electrical resistivity

Keywords

  • Germanium
  • Monitor photodiodes
  • Photodetector
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Morrison, C. B., Boisvert, J. C., Sudharsanan, R., Haddad, M., Isshiki, T., Krut, D. D., ... Karam, N. H. (2003). Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material. In R. E. Longshore, & S. Sivananthan (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5209, pp. 125-132)

Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material. / Morrison, Charles B.; Boisvert, Joseph C.; Sudharsanan, Rengarajan; Haddad, Moran; Isshiki, Takahiro; Krut, Dmitri D.; King, Richard; Karam, Nasser H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.E. Longshore; S. Sivananthan. Vol. 5209 2003. p. 125-132.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Morrison, CB, Boisvert, JC, Sudharsanan, R, Haddad, M, Isshiki, T, Krut, DD, King, R & Karam, NH 2003, Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material. in RE Longshore & S Sivananthan (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5209, pp. 125-132, Materials for Infrared Detectors III, San Diego, CA, United States, 8/7/03.
Morrison CB, Boisvert JC, Sudharsanan R, Haddad M, Isshiki T, Krut DD et al. Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material. In Longshore RE, Sivananthan S, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5209. 2003. p. 125-132
Morrison, Charles B. ; Boisvert, Joseph C. ; Sudharsanan, Rengarajan ; Haddad, Moran ; Isshiki, Takahiro ; Krut, Dmitri D. ; King, Richard ; Karam, Nasser H. / Reliable Large-Area Germanium Photodetectors Fabricated with a Diffused Junction from In-situ III-V Epitaxial Material. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.E. Longshore ; S. Sivananthan. Vol. 5209 2003. pp. 125-132
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