Abstract
Low cost germanium photodetectors for sensing applications in the 900-1600 nm spectral region have been developed. By varying the Ge substrate resistivity as well as device area, photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Low leakage current devices of various sizes up to 1 cm 2 have been fabricated and have consistently exhibited exceptionally high shunt resistances and excellent linearity. Over 5000 hours of active stress testing have left the ultra-low leakage currents unchanged. These data were measured in accordance with Telcordia 468-CORE requirements at 85°C, 125°C and 175°C. The results indicate that these mesa photodetectors meet telecommunication industry requirements for reliability. These devices are comparable to commercially available Ge photodetectors, and can be readily substituted for more complex InGaAs photo-detectors in applications such as laser monitor diodes.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | R.E. Longshore, S. Sivananthan |
Pages | 125-132 |
Number of pages | 8 |
Volume | 5209 |
State | Published - 2003 |
Externally published | Yes |
Event | Materials for Infrared Detectors III - San Diego, CA, United States Duration: Aug 7 2003 → Aug 8 2003 |
Other
Other | Materials for Infrared Detectors III |
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Country/Territory | United States |
City | San Diego, CA |
Period | 8/7/03 → 8/8/03 |
Keywords
- Germanium
- Monitor photodiodes
- Photodetector
- Reliability
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics