Reliability studies of AlGaN/GaN high electron mobility transistors

D. J. Cheney, E. A. Douglas, L. Liu, C. F. Lo, Y. Y. Xi, B. P. Gila, F. Ren, David Horton, M. E. Law, David Smith, S. J. Pearton

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in high power and high frequency applications, but the degradation mechanisms that drive failure in the field are not completely understood. Since some of these mechanisms are current or field driven, reliability studies must go beyond the typical Arrhenius-accelerated life tests. In this paper, we summarize recent work on electric field or current driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plates) and the effect of device fabrication processes for both dc and RF stress conditions.

Original languageEnglish (US)
Article number074019
JournalSemiconductor Science and Technology
Volume28
Issue number7
DOIs
StatePublished - Jul 2013

Fingerprint

High electron mobility transistors
high electron mobility transistors
Electric fields
Degradation
Electric currents
Metallizing
accelerated life tests
degradation
electric fields
electric current
Fabrication
acceptability
fabrication
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Cheney, D. J., Douglas, E. A., Liu, L., Lo, C. F., Xi, Y. Y., Gila, B. P., ... Pearton, S. J. (2013). Reliability studies of AlGaN/GaN high electron mobility transistors. Semiconductor Science and Technology, 28(7), [074019]. https://doi.org/10.1088/0268-1242/28/7/074019

Reliability studies of AlGaN/GaN high electron mobility transistors. / Cheney, D. J.; Douglas, E. A.; Liu, L.; Lo, C. F.; Xi, Y. Y.; Gila, B. P.; Ren, F.; Horton, David; Law, M. E.; Smith, David; Pearton, S. J.

In: Semiconductor Science and Technology, Vol. 28, No. 7, 074019, 07.2013.

Research output: Contribution to journalArticle

Cheney, DJ, Douglas, EA, Liu, L, Lo, CF, Xi, YY, Gila, BP, Ren, F, Horton, D, Law, ME, Smith, D & Pearton, SJ 2013, 'Reliability studies of AlGaN/GaN high electron mobility transistors', Semiconductor Science and Technology, vol. 28, no. 7, 074019. https://doi.org/10.1088/0268-1242/28/7/074019
Cheney, D. J. ; Douglas, E. A. ; Liu, L. ; Lo, C. F. ; Xi, Y. Y. ; Gila, B. P. ; Ren, F. ; Horton, David ; Law, M. E. ; Smith, David ; Pearton, S. J. / Reliability studies of AlGaN/GaN high electron mobility transistors. In: Semiconductor Science and Technology. 2013 ; Vol. 28, No. 7.
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