Reliability studies of AlGaN/GaN high electron mobility transistors

D. J. Cheney, E. A. Douglas, L. Liu, C. F. Lo, Y. Y. Xi, B. P. Gila, F. Ren, David Horton, M. E. Law, David Smith, S. J. Pearton

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in high power and high frequency applications, but the degradation mechanisms that drive failure in the field are not completely understood. Since some of these mechanisms are current or field driven, reliability studies must go beyond the typical Arrhenius-accelerated life tests. In this paper, we summarize recent work on electric field or current driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plates) and the effect of device fabrication processes for both dc and RF stress conditions.

Original languageEnglish (US)
Article number074019
JournalSemiconductor Science and Technology
Volume28
Issue number7
DOIs
StatePublished - Jul 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Cheney, D. J., Douglas, E. A., Liu, L., Lo, C. F., Xi, Y. Y., Gila, B. P., Ren, F., Horton, D., Law, M. E., Smith, D., & Pearton, S. J. (2013). Reliability studies of AlGaN/GaN high electron mobility transistors. Semiconductor Science and Technology, 28(7), [074019]. https://doi.org/10.1088/0268-1242/28/7/074019