Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors

Michael L. McLain, Hugh Barnaby, Ivan S. Esqueda, Jonathan Oder, Bert Vermeire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

It was recently shown that radiation hardened by design (RHBD) annular-gate MOSFETs not only provide total-dose radiation tolerance, but can also improve the hot-carrier reliability of advanced CMOS circuits. In this paper, the hot-carrier reliability of standard two-edge and enclosed geometry transistors intended for use in space and strategic environments is demonstrated. Hot-carrier reliability measurements on standard two-edge, standard enclosed, gate under-lap enclosed, and annular transistors fabricated in the same 90 nm high performance technology indicate an improvement in hot-carrier lifetime in the enclosed geometry and multi-finger transistor designs when compared to a conventional single stripe MOSFET. Two-dimensional device simulations, along with experimental measurements, provide physical insight into the reliability response of each device type.

Original languageEnglish (US)
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages174-179
Number of pages6
DOIs
StatePublished - Nov 12 2009
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: Apr 26 2009Apr 30 2009

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period4/26/094/30/09

Keywords

  • Enclosed geometry transistors
  • Hot-carrier reliability
  • Radiation hardened by design (RHBD)
  • Total ionizing dose

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    McLain, M. L., Barnaby, H., Esqueda, I. S., Oder, J., & Vermeire, B. (2009). Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 174-179). [5173247] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173247