TY - GEN
T1 - Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors
AU - McLain, Michael L.
AU - Barnaby, Hugh
AU - Esqueda, Ivan S.
AU - Oder, Jonathan
AU - Vermeire, Bert
PY - 2009
Y1 - 2009
N2 - It was recently shown that radiation hardened by design (RHBD) annular-gate MOSFETs not only provide total-dose radiation tolerance, but can also improve the hot-carrier reliability of advanced CMOS circuits. In this paper, the hot-carrier reliability of standard two-edge and enclosed geometry transistors intended for use in space and strategic environments is demonstrated. Hot-carrier reliability measurements on standard two-edge, standard enclosed, gate under-lap enclosed, and annular transistors fabricated in the same 90 nm high performance technology indicate an improvement in hot-carrier lifetime in the enclosed geometry and multi-finger transistor designs when compared to a conventional single stripe MOSFET. Two-dimensional device simulations, along with experimental measurements, provide physical insight into the reliability response of each device type.
AB - It was recently shown that radiation hardened by design (RHBD) annular-gate MOSFETs not only provide total-dose radiation tolerance, but can also improve the hot-carrier reliability of advanced CMOS circuits. In this paper, the hot-carrier reliability of standard two-edge and enclosed geometry transistors intended for use in space and strategic environments is demonstrated. Hot-carrier reliability measurements on standard two-edge, standard enclosed, gate under-lap enclosed, and annular transistors fabricated in the same 90 nm high performance technology indicate an improvement in hot-carrier lifetime in the enclosed geometry and multi-finger transistor designs when compared to a conventional single stripe MOSFET. Two-dimensional device simulations, along with experimental measurements, provide physical insight into the reliability response of each device type.
KW - Enclosed geometry transistors
KW - Hot-carrier reliability
KW - Radiation hardened by design (RHBD)
KW - Total ionizing dose
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U2 - 10.1109/IRPS.2009.5173247
DO - 10.1109/IRPS.2009.5173247
M3 - Conference contribution
AN - SCOPUS:70449115634
SN - 0780388038
SN - 9780780388031
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 174
EP - 179
BT - 2009 IEEE International Reliability Physics Symposium, IRPS 2009
T2 - 2009 IEEE International Reliability Physics Symposium, IRPS 2009
Y2 - 26 April 2009 through 30 April 2009
ER -