Abstract

Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism. In the present work, an electro thermal particle based device simulator has been developed to address these two issues. It consists of a Monte Carlo-Poisson solver that is self-consistently coupled with a thermal solver for both the acoustic and the optical phonon baths. This simulator has been used to understand the physics behind these mechanisms that lead to reliability concerns.

Original languageEnglish (US)
Title of host publication2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs
StatePublished - Sep 27 2012
Event2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States
Duration: May 22 2012May 25 2012

Publication series

Name2012 15th International Workshop on Computational Electronics, IWCE 2012

Other

Other2012 15th International Workshop on Computational Electronics, IWCE 2012
CountryUnited States
CityMadison, WI
Period5/22/125/25/12

Keywords

  • GaN HEMTs
  • Self-heating effects
  • current colapse
  • electromechanical coupling
  • modeling
  • reliability

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Padmanabhan, B., Vasileska, D., & Goodnick, S. (2012). Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT. In 2012 15th International Workshop on Computational Electronics, IWCE 2012 [6242851] (2012 15th International Workshop on Computational Electronics, IWCE 2012). https://doi.org/10.1109/IWCE.2012.6242851