Abstract

Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism. In the present work, an electro thermal particle based device simulator has been developed to address these two issues. It consists of a Monte Carlo-Poisson solver that is self-consistently coupled with a thermal solver for both the acoustic and the optical phonon baths. This simulator has been used to understand the physics behind these mechanisms that lead to reliability concerns.

Original languageEnglish (US)
Title of host publication2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs
StatePublished - 2012
Event2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States
Duration: May 22 2012May 25 2012

Other

Other2012 15th International Workshop on Computational Electronics, IWCE 2012
CountryUnited States
CityMadison, WI
Period5/22/125/25/12

Fingerprint

High electron mobility transistors
Degradation
Simulators
Electromechanical coupling
Physics
Acoustics
Electric fields
Hot Temperature

Keywords

  • current colapse
  • electromechanical coupling
  • GaN HEMTs
  • modeling
  • reliability
  • Self-heating effects

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Padmanabhan, B., Vasileska, D., & Goodnick, S. (2012). Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT. In 2012 15th International Workshop on Computational Electronics, IWCE 2012 [6242851] https://doi.org/10.1109/IWCE.2012.6242851

Reliability of GaN HEMTs : Current degradation in GaN/AlGaN/AlN/GaN HEMT. / Padmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen.

2012 15th International Workshop on Computational Electronics, IWCE 2012. 2012. 6242851.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Padmanabhan, B, Vasileska, D & Goodnick, S 2012, Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT. in 2012 15th International Workshop on Computational Electronics, IWCE 2012., 6242851, 2012 15th International Workshop on Computational Electronics, IWCE 2012, Madison, WI, United States, 5/22/12. https://doi.org/10.1109/IWCE.2012.6242851
Padmanabhan B, Vasileska D, Goodnick S. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT. In 2012 15th International Workshop on Computational Electronics, IWCE 2012. 2012. 6242851 https://doi.org/10.1109/IWCE.2012.6242851
Padmanabhan, Balaji ; Vasileska, Dragica ; Goodnick, Stephen. / Reliability of GaN HEMTs : Current degradation in GaN/AlGaN/AlN/GaN HEMT. 2012 15th International Workshop on Computational Electronics, IWCE 2012. 2012.
@inproceedings{56f97878a8d14fb0b70494a5fac412d5,
title = "Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT",
abstract = "Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism. In the present work, an electro thermal particle based device simulator has been developed to address these two issues. It consists of a Monte Carlo-Poisson solver that is self-consistently coupled with a thermal solver for both the acoustic and the optical phonon baths. This simulator has been used to understand the physics behind these mechanisms that lead to reliability concerns.",
keywords = "current colapse, electromechanical coupling, GaN HEMTs, modeling, reliability, Self-heating effects",
author = "Balaji Padmanabhan and Dragica Vasileska and Stephen Goodnick",
year = "2012",
doi = "10.1109/IWCE.2012.6242851",
language = "English (US)",
isbn = "9781467307055",
booktitle = "2012 15th International Workshop on Computational Electronics, IWCE 2012",

}

TY - GEN

T1 - Reliability of GaN HEMTs

T2 - Current degradation in GaN/AlGaN/AlN/GaN HEMT

AU - Padmanabhan, Balaji

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 2012

Y1 - 2012

N2 - Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism. In the present work, an electro thermal particle based device simulator has been developed to address these two issues. It consists of a Monte Carlo-Poisson solver that is self-consistently coupled with a thermal solver for both the acoustic and the optical phonon baths. This simulator has been used to understand the physics behind these mechanisms that lead to reliability concerns.

AB - Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism. In the present work, an electro thermal particle based device simulator has been developed to address these two issues. It consists of a Monte Carlo-Poisson solver that is self-consistently coupled with a thermal solver for both the acoustic and the optical phonon baths. This simulator has been used to understand the physics behind these mechanisms that lead to reliability concerns.

KW - current colapse

KW - electromechanical coupling

KW - GaN HEMTs

KW - modeling

KW - reliability

KW - Self-heating effects

UR - http://www.scopus.com/inward/record.url?scp=84866551339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866551339&partnerID=8YFLogxK

U2 - 10.1109/IWCE.2012.6242851

DO - 10.1109/IWCE.2012.6242851

M3 - Conference contribution

AN - SCOPUS:84866551339

SN - 9781467307055

BT - 2012 15th International Workshop on Computational Electronics, IWCE 2012

ER -