Reliability concerns due to self-heating effects in GaN HEMTs

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of selfheating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.