Abstract

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of selfheating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

Original languageEnglish (US)
Pages (from-to)78-82
Number of pages5
JournalJournal of Integrated Circuits and Systems
Volume8
Issue number2
StatePublished - Sep 2013

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Electrostatic devices
High electron mobility transistors
Heating

Keywords

  • Current collapse
  • GaN HEMTs
  • Self-heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Reliability concerns due to self-heating effects in GaN HEMTs. / Padmanabhan, B.; Vasileska, Dragica; Goodnick, Stephen.

In: Journal of Integrated Circuits and Systems, Vol. 8, No. 2, 09.2013, p. 78-82.

Research output: Contribution to journalArticle

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