Relaxation and H coverage of ammonium fluoride treated Si(111)

M. Copel, Robert Culbertson, R. M. Tromp

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Using medium energy ion scattering and elastic recoil detection, we have studied silicon surfaces prepared by ex situ NH4F wet etching. We report direct measurements of relaxation and hydrogen coverage of the passivated Si(111)-(1×1) surface. For Si(111), nearly ideal, unreconstructed surfaces are obtained, terminated by a single atomic layer of hydrogen. Silicon backscatter yields agree closely with simulations of a bulk truncation, with an inward relaxation of the outermost layer of 0.075±0.03 Å. On the other hand, Si(001) prepared by NH4F solution shows severe roughening.

Original languageEnglish (US)
Pages (from-to)2344-2346
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number18
DOIs
StatePublished - 1994

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fluorides
ion scattering
silicon
hydrogen
etching
approximation
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Relaxation and H coverage of ammonium fluoride treated Si(111). / Copel, M.; Culbertson, Robert; Tromp, R. M.

In: Applied Physics Letters, Vol. 65, No. 18, 1994, p. 2344-2346.

Research output: Contribution to journalArticle

Copel, M. ; Culbertson, Robert ; Tromp, R. M. / Relaxation and H coverage of ammonium fluoride treated Si(111). In: Applied Physics Letters. 1994 ; Vol. 65, No. 18. pp. 2344-2346.
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