Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, D. K. Ferry, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Research output: Contribution to journalArticle

Abstract

Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

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Nanostructures
Electric fields
Semiconductor materials
Electron transport properties
electric fields
Electrons
Raman spectroscopy
electrons
transport properties
energy
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure. / Liang, W.; Tsen, Kong-Thon; Ferry, D. K.; Wu, Meng Chyi; Ho, Chong Long; Ho, Wen Jeng.

In: Semiconductor Science and Technology, Vol. 19, No. 4 SPEC. ISS., 04.2004.

Research output: Contribution to journalArticle

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AU - Ho, Wen Jeng

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AB - Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

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