Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure

W. Liang; Kong-Thon Tsen; D. K. Ferry; Meng Chyi Wu; Chong Long Ho; Wen Jeng Ho

doi:10.1088/0268-1242/19/4/008

Relatively large electric-field induced electron drift velocity observed in an In_xGa_1-xAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, D. K. Ferry, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Research output: Contribution to journal › Article › peer-review

Abstract

Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an In_xGa_1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in In_xGa _1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	S23-S24
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/008
State	Published - Apr 1 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/19/4/008

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title = "Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure",

abstract = "Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.",

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T1 - Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure

AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Wu, Meng Chyi

AU - Ho, Chong Long

AU - Ho, Wen Jeng

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

AB - Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

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JO - Semiconductor Science and Technology

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Relatively large electric-field induced electron drift velocity observed in an In_xGa_1-xAs-based p-i-n semiconductor nanostructure

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