Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, D. K. Ferry, Meng Chyi Wu, Chong Long Ho, Wen Jeng Ho

Research output: Contribution to journalArticle

Abstract

Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L(X) energy separations in InxGa 1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)S23-S24
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this