Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf-O films on Si

Sandwip Dey, A. Das, M. Tsai, D. Gu, M. Floyd, Ray Carpenter, H. De Waard, C. Werkhoven, S. Marcus

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Abstract

The relationship among the equivalent oxide thickness (EOT), nanochemistry and nanostructure of atomic layer chemical-vapor-deposited (ALCVD) Hf-O-based films, with oxide and nitrided oxide interlayers on Si substrate using X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), scanning transmisson electron microscopy (STEM) was studied. The XPS studies indicated the formation of Hf-O-Si bonds in as-deposited amorphous films, the amount of which was influenced by the interlayer composition and annealing conditions. A three-layer capacitor model was used to determine the respective contributions to the measured EOT. The electric permittivity of the interlayer was found to be 0.06.

Original languageEnglish (US)
Pages (from-to)5042-5048
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
StatePublished - May 1 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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