Abstract
This study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945 eV and 2.154 eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100 V/μm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | D.S. Schwartz, D.S. Shih, A.G. Evans, H.N.G. Wadley |
| Publisher | MRS |
| Pages | 191-196 |
| Number of pages | 6 |
| Volume | 508 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998 |
Other
| Other | Proceedings of the 1998 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/13/98 → 4/15/98 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials