Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

C. C. Kim; Y. P. Chen; M. Daraselia; S. Sivananthan; S. C Y Tsen; David Smith

doi:10.1016/S0022-0248(96)01046-9

Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

C. C. Kim, Y. P. Chen, M. Daraselia, S. Sivananthan, S. C Y Tsen, David Smith

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

ZnSe films were grown on GaAs substrates with various growth conditions by molecular beam epitaxy (MBE). The optical anisotropy of the films was determined by reflectivity difference spectroscopy (RDS) during and/or after growth. Comparison of the in situ RDS data with spectroscopic ellipsometry (SE) data suggests that RDS could be utilized to determine film thickness, alloy composition and temperature during growth. The RDS spectra were also compared with results from transmission electron microscopy (TEM), X-ray double-crystal rocking curve (DCRC) and Hall measurements. Comparison with the Hall effect showed that the magnitude of the optical anisotropy is generally larger for higher carrier concentrations. Comparison with TEM results and the full-width-at-half-maximum measurements by DCRC reveals that: (i) the E₁ structure arising from the bulk spatial distribution (BSD) is correlated with film quality; (ii) the amplitude of the interference below E₀ provides a measure of the ZnSe/GaAs interface quality; and (iii) the large anisotropy above the band gap is correlated with surface roughness.

Original language	English (US)
Pages (from-to)	328-333
Number of pages	6
Journal	Journal of Crystal Growth
Volume	175-176
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-0248(96)01046-9
State	Published - May 1997

Keywords

MBE
RDS
SE
TEM
ZnSe

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)01046-9

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@article{84993312892f47a6bf8f6be05954689e,

title = "Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy",

abstract = "ZnSe films were grown on GaAs substrates with various growth conditions by molecular beam epitaxy (MBE). The optical anisotropy of the films was determined by reflectivity difference spectroscopy (RDS) during and/or after growth. Comparison of the in situ RDS data with spectroscopic ellipsometry (SE) data suggests that RDS could be utilized to determine film thickness, alloy composition and temperature during growth. The RDS spectra were also compared with results from transmission electron microscopy (TEM), X-ray double-crystal rocking curve (DCRC) and Hall measurements. Comparison with the Hall effect showed that the magnitude of the optical anisotropy is generally larger for higher carrier concentrations. Comparison with TEM results and the full-width-at-half-maximum measurements by DCRC reveals that: (i) the E1 structure arising from the bulk spatial distribution (BSD) is correlated with film quality; (ii) the amplitude of the interference below E0 provides a measure of the ZnSe/GaAs interface quality; and (iii) the large anisotropy above the band gap is correlated with surface roughness.",

keywords = "MBE, RDS, SE, TEM, ZnSe",

author = "Kim, {C. C.} and Chen, {Y. P.} and M. Daraselia and S. Sivananthan and Tsen, {S. C Y} and David Smith",

note = "Funding Information: This work was supported by internal funding of the Microphysics Laboratory at the University of Illinois at Chicago. Electron microscopy was conducted at the Center for High Resolution Electron Microscopy at ASU supported by NSF Grant DMR-93-14326.",

year = "1997",

month = may,

doi = "10.1016/S0022-0248(96)01046-9",

language = "English (US)",

volume = "175-176",

pages = "328--333",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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T1 - Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

AU - Kim, C. C.

AU - Chen, Y. P.

AU - Daraselia, M.

AU - Sivananthan, S.

AU - Tsen, S. C Y

AU - Smith, David

N1 - Funding Information: This work was supported by internal funding of the Microphysics Laboratory at the University of Illinois at Chicago. Electron microscopy was conducted at the Center for High Resolution Electron Microscopy at ASU supported by NSF Grant DMR-93-14326.

PY - 1997/5

Y1 - 1997/5

N2 - ZnSe films were grown on GaAs substrates with various growth conditions by molecular beam epitaxy (MBE). The optical anisotropy of the films was determined by reflectivity difference spectroscopy (RDS) during and/or after growth. Comparison of the in situ RDS data with spectroscopic ellipsometry (SE) data suggests that RDS could be utilized to determine film thickness, alloy composition and temperature during growth. The RDS spectra were also compared with results from transmission electron microscopy (TEM), X-ray double-crystal rocking curve (DCRC) and Hall measurements. Comparison with the Hall effect showed that the magnitude of the optical anisotropy is generally larger for higher carrier concentrations. Comparison with TEM results and the full-width-at-half-maximum measurements by DCRC reveals that: (i) the E1 structure arising from the bulk spatial distribution (BSD) is correlated with film quality; (ii) the amplitude of the interference below E0 provides a measure of the ZnSe/GaAs interface quality; and (iii) the large anisotropy above the band gap is correlated with surface roughness.

AB - ZnSe films were grown on GaAs substrates with various growth conditions by molecular beam epitaxy (MBE). The optical anisotropy of the films was determined by reflectivity difference spectroscopy (RDS) during and/or after growth. Comparison of the in situ RDS data with spectroscopic ellipsometry (SE) data suggests that RDS could be utilized to determine film thickness, alloy composition and temperature during growth. The RDS spectra were also compared with results from transmission electron microscopy (TEM), X-ray double-crystal rocking curve (DCRC) and Hall measurements. Comparison with the Hall effect showed that the magnitude of the optical anisotropy is generally larger for higher carrier concentrations. Comparison with TEM results and the full-width-at-half-maximum measurements by DCRC reveals that: (i) the E1 structure arising from the bulk spatial distribution (BSD) is correlated with film quality; (ii) the amplitude of the interference below E0 provides a measure of the ZnSe/GaAs interface quality; and (iii) the large anisotropy above the band gap is correlated with surface roughness.

KW - MBE

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KW - SE

KW - TEM

KW - ZnSe

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Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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