Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy

C. C. Kim, Y. P. Chen, M. Daraselia, S. Sivananthan, S. C Y Tsen, David Smith

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

ZnSe films were grown on GaAs substrates with various growth conditions by molecular beam epitaxy (MBE). The optical anisotropy of the films was determined by reflectivity difference spectroscopy (RDS) during and/or after growth. Comparison of the in situ RDS data with spectroscopic ellipsometry (SE) data suggests that RDS could be utilized to determine film thickness, alloy composition and temperature during growth. The RDS spectra were also compared with results from transmission electron microscopy (TEM), X-ray double-crystal rocking curve (DCRC) and Hall measurements. Comparison with the Hall effect showed that the magnitude of the optical anisotropy is generally larger for higher carrier concentrations. Comparison with TEM results and the full-width-at-half-maximum measurements by DCRC reveals that: (i) the E1 structure arising from the bulk spatial distribution (BSD) is correlated with film quality; (ii) the amplitude of the interference below E0 provides a measure of the ZnSe/GaAs interface quality; and (iii) the large anisotropy above the band gap is correlated with surface roughness.

Original languageEnglish (US)
Pages (from-to)328-333
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
DOIs
StatePublished - May 1997

Keywords

  • MBE
  • RDS
  • SE
  • TEM
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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