TY - JOUR
T1 - Reflection electron microscopy studies of GaP(110) surfaces in UHV-TEM
AU - Gajdardziska-Josifovska, M.
AU - McCartney, Martha
AU - Smith, David
N1 - Funding Information:
This work is basedu pon researchc onducteda t the Center for High Resolution Electron Microscopy, which is supported by the National ScienceF oundation under grant DMR89-13384.
PY - 1993/5/10
Y1 - 1993/5/10
N2 - Reflection electron microscopy (REM) and reflection high energy electron diffraction (RHEED) were used in a UHV electron microscope to study the effects of various surface treatments on the topography and crystal structure of cleaved GaP(110) surfaces. Reported ion-milling and annealing cleaning treatments resulted in rough surface topography, and in good 1 × 1 RHEED patterns. Annealing at 800°C resulted in surface smoothing, but also led to dissociation of GaP with viscous flow of a Ga-rich molten phase on the surface. Regions on the surface which were not covered by the molten phase maintained the 1 × 1 reconstruction typical of the clean GaP(110) surface.
AB - Reflection electron microscopy (REM) and reflection high energy electron diffraction (RHEED) were used in a UHV electron microscope to study the effects of various surface treatments on the topography and crystal structure of cleaved GaP(110) surfaces. Reported ion-milling and annealing cleaning treatments resulted in rough surface topography, and in good 1 × 1 RHEED patterns. Annealing at 800°C resulted in surface smoothing, but also led to dissociation of GaP with viscous flow of a Ga-rich molten phase on the surface. Regions on the surface which were not covered by the molten phase maintained the 1 × 1 reconstruction typical of the clean GaP(110) surface.
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U2 - 10.1016/0039-6028(93)91127-B
DO - 10.1016/0039-6028(93)91127-B
M3 - Article
AN - SCOPUS:0027595443
SN - 0039-6028
VL - 287-288
SP - 1062
EP - 1066
JO - Surface Science
JF - Surface Science
IS - PART 2
ER -