We examined the phase transition of TiSi 2 from C49 to C54 by introducing a thin Ta interlayer between Ti film and Si(111) substrate. The Ta interlayered samples were prepared by depositing 5 Å Ta and 100 Å Ti films sequentially on Si(111) substrates in the UHV system. As control samples, 100 Å Ti films were deposited on Si(111) substrates. The deposited substrates were annealed insitu at temperatures between 500-750°C with 50°C increments for 10 min. The TiSi 2 formed in UHV system was analyzed by using XRD, AES, SEM and a four-point probe. The control samples exhibited the transition temperature of 750°C from C49 to C54. However, the TiSi 2 samples with 5 Å of Ta interlayer showed significant reduction of the phase transition temperature of C54 TiSi 2. The XRD pattern analysis indicated that the transition temperature of TiSi 2 from the C49 to C54 phase was lowered by about 200°C with the addition of 5 ÅTa interlayer. The sheet resistance measurement showed lower resistivity of Ta interlayered samples of TiSi 2 due to the reduction in the formation temperature of C54 phase. The SEM micrographs showed that the TiSi 2 with 5 Å Ta interlayer suppressed the surface agglomeration, significantly. The AES analysis data indicated that the titanium suicide formed at high temperature (>500°C) showed a 1:2 stoichiometry of Ti:Si and small amounts of impurities in the suicide film and the interface between suicide and Si substrate.
|Original language||English (US)|
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 4|
|State||Published - Dec 1 1999|
ASJC Scopus subject areas
- Physics and Astronomy(all)