Reduction of the transition temperature of C54 TiSi 2 through a Ta interlayer

Bokhee Jung, Young Do Kim, Hyeongtag Jeon, Woochul Yang, Robert Nemanich

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We examined the phase transition of TiSi 2 from C49 to C54 by introducing a thin Ta interlayer between Ti film and Si(111) substrate. The Ta interlayered samples were prepared by depositing 5 Å Ta and 100 Å Ti films sequentially on Si(111) substrates in the UHV system. As control samples, 100 Å Ti films were deposited on Si(111) substrates. The deposited substrates were annealed insitu at temperatures between 500-750°C with 50°C increments for 10 min. The TiSi 2 formed in UHV system was analyzed by using XRD, AES, SEM and a four-point probe. The control samples exhibited the transition temperature of 750°C from C49 to C54. However, the TiSi 2 samples with 5 Å of Ta interlayer showed significant reduction of the phase transition temperature of C54 TiSi 2. The XRD pattern analysis indicated that the transition temperature of TiSi 2 from the C49 to C54 phase was lowered by about 200°C with the addition of 5 ÅTa interlayer. The sheet resistance measurement showed lower resistivity of Ta interlayered samples of TiSi 2 due to the reduction in the formation temperature of C54 phase. The SEM micrographs showed that the TiSi 2 with 5 Å Ta interlayer suppressed the surface agglomeration, significantly. The AES analysis data indicated that the titanium suicide formed at high temperature (>500°C) showed a 1:2 stoichiometry of Ti:Si and small amounts of impurities in the suicide film and the interface between suicide and Si substrate.

Original languageEnglish (US)
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 4
StatePublished - 1999
Externally publishedYes

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interlayers
transition temperature
scanning electron microscopy
agglomeration
stoichiometry
titanium
impurities
electrical resistivity
temperature
probes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reduction of the transition temperature of C54 TiSi 2 through a Ta interlayer. / Jung, Bokhee; Kim, Young Do; Jeon, Hyeongtag; Yang, Woochul; Nemanich, Robert.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 4, 1999.

Research output: Contribution to journalArticle

Jung, Bokhee ; Kim, Young Do ; Jeon, Hyeongtag ; Yang, Woochul ; Nemanich, Robert. / Reduction of the transition temperature of C54 TiSi 2 through a Ta interlayer. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 4.
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abstract = "We examined the phase transition of TiSi 2 from C49 to C54 by introducing a thin Ta interlayer between Ti film and Si(111) substrate. The Ta interlayered samples were prepared by depositing 5 {\AA} Ta and 100 {\AA} Ti films sequentially on Si(111) substrates in the UHV system. As control samples, 100 {\AA} Ti films were deposited on Si(111) substrates. The deposited substrates were annealed insitu at temperatures between 500-750°C with 50°C increments for 10 min. The TiSi 2 formed in UHV system was analyzed by using XRD, AES, SEM and a four-point probe. The control samples exhibited the transition temperature of 750°C from C49 to C54. However, the TiSi 2 samples with 5 {\AA} of Ta interlayer showed significant reduction of the phase transition temperature of C54 TiSi 2. The XRD pattern analysis indicated that the transition temperature of TiSi 2 from the C49 to C54 phase was lowered by about 200°C with the addition of 5 {\AA}Ta interlayer. The sheet resistance measurement showed lower resistivity of Ta interlayered samples of TiSi 2 due to the reduction in the formation temperature of C54 phase. The SEM micrographs showed that the TiSi 2 with 5 {\AA} Ta interlayer suppressed the surface agglomeration, significantly. The AES analysis data indicated that the titanium suicide formed at high temperature (>500°C) showed a 1:2 stoichiometry of Ti:Si and small amounts of impurities in the suicide film and the interface between suicide and Si substrate.",
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