Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer

Bokhee Jung, Young Do Kim, Woochul Yang, Robert Nemanich, Hyeongtag Jeon

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The effect of a thin Ta interlayer on the C49 to C54 phase transition of TiSi 2 on Si(111) was examined. The Ta interlayered samples were prepared by depositing Ta and Ti films sequentially on Si(111) substrates in a UHV system. As control samples, 100Å Ti films were deposited directly on clean Si(111) substrates. The deposited substrates were annealed for 10 min, in-situ, at temperatures between 500°C and 750°C using 50°C increments. The TiSi 2, which formed in this UHV process, was analyzed with XRD, AES, SEM, TEM, and four-point probe measurements. The control samples exhibited the C49 to C54 transition at a temperature of 750°C. However, the TiSi 2 samples with 5Å and 10Å Ta interlayers displayed a significant reduction of the phase transition temperature. The XRD analysis indicated that the C49 to C54 transition temperature of TiSi 2 was lowered by ∼200°C. The sheet resistance measurement showed a low resistivity characteristic of C54. The SEM and TEM micrographs showed that the Ta interlayer also suppressed the surface agglomeration of the C54 TiSi 2 film. The AES analysis data indicated that the composition of the titanium silicide showed the expected Ti:Si stoichiometry of 1:2.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages59-64
Number of pages6
Volume564
StatePublished - 1999
Externally publishedYes

Fingerprint

Superconducting transition temperature
Phase transitions
Substrates
Transmission electron microscopy
Scanning electron microscopy
Sheet resistance
Stoichiometry
Agglomeration
Titanium
Temperature
Chemical analysis
titanium silicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jung, B., Kim, Y. D., Yang, W., Nemanich, R., & Jeon, H. (1999). Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer In Materials Research Society Symposium - Proceedings (Vol. 564, pp. 59-64)

Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer . / Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, Robert; Jeon, Hyeongtag.

Materials Research Society Symposium - Proceedings. Vol. 564 1999. p. 59-64.

Research output: Chapter in Book/Report/Conference proceedingChapter

Jung, B, Kim, YD, Yang, W, Nemanich, R & Jeon, H 1999, Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer in Materials Research Society Symposium - Proceedings. vol. 564, pp. 59-64.
Jung B, Kim YD, Yang W, Nemanich R, Jeon H. Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer In Materials Research Society Symposium - Proceedings. Vol. 564. 1999. p. 59-64
Jung, Bokhee ; Kim, Young Do ; Yang, Woochul ; Nemanich, Robert ; Jeon, Hyeongtag. / Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer Materials Research Society Symposium - Proceedings. Vol. 564 1999. pp. 59-64
@inbook{a5b11d10bf1447ccab35368adb24a414,
title = "Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer",
abstract = "The effect of a thin Ta interlayer on the C49 to C54 phase transition of TiSi 2 on Si(111) was examined. The Ta interlayered samples were prepared by depositing Ta and Ti films sequentially on Si(111) substrates in a UHV system. As control samples, 100{\AA} Ti films were deposited directly on clean Si(111) substrates. The deposited substrates were annealed for 10 min, in-situ, at temperatures between 500°C and 750°C using 50°C increments. The TiSi 2, which formed in this UHV process, was analyzed with XRD, AES, SEM, TEM, and four-point probe measurements. The control samples exhibited the C49 to C54 transition at a temperature of 750°C. However, the TiSi 2 samples with 5{\AA} and 10{\AA} Ta interlayers displayed a significant reduction of the phase transition temperature. The XRD analysis indicated that the C49 to C54 transition temperature of TiSi 2 was lowered by ∼200°C. The sheet resistance measurement showed a low resistivity characteristic of C54. The SEM and TEM micrographs showed that the Ta interlayer also suppressed the surface agglomeration of the C54 TiSi 2 film. The AES analysis data indicated that the composition of the titanium silicide showed the expected Ti:Si stoichiometry of 1:2.",
author = "Bokhee Jung and Kim, {Young Do} and Woochul Yang and Robert Nemanich and Hyeongtag Jeon",
year = "1999",
language = "English (US)",
volume = "564",
pages = "59--64",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - CHAP

T1 - Reduction of the phase transition temperature of TiSi 2 on Si(111) using a Ta interlayer

AU - Jung, Bokhee

AU - Kim, Young Do

AU - Yang, Woochul

AU - Nemanich, Robert

AU - Jeon, Hyeongtag

PY - 1999

Y1 - 1999

N2 - The effect of a thin Ta interlayer on the C49 to C54 phase transition of TiSi 2 on Si(111) was examined. The Ta interlayered samples were prepared by depositing Ta and Ti films sequentially on Si(111) substrates in a UHV system. As control samples, 100Å Ti films were deposited directly on clean Si(111) substrates. The deposited substrates were annealed for 10 min, in-situ, at temperatures between 500°C and 750°C using 50°C increments. The TiSi 2, which formed in this UHV process, was analyzed with XRD, AES, SEM, TEM, and four-point probe measurements. The control samples exhibited the C49 to C54 transition at a temperature of 750°C. However, the TiSi 2 samples with 5Å and 10Å Ta interlayers displayed a significant reduction of the phase transition temperature. The XRD analysis indicated that the C49 to C54 transition temperature of TiSi 2 was lowered by ∼200°C. The sheet resistance measurement showed a low resistivity characteristic of C54. The SEM and TEM micrographs showed that the Ta interlayer also suppressed the surface agglomeration of the C54 TiSi 2 film. The AES analysis data indicated that the composition of the titanium silicide showed the expected Ti:Si stoichiometry of 1:2.

AB - The effect of a thin Ta interlayer on the C49 to C54 phase transition of TiSi 2 on Si(111) was examined. The Ta interlayered samples were prepared by depositing Ta and Ti films sequentially on Si(111) substrates in a UHV system. As control samples, 100Å Ti films were deposited directly on clean Si(111) substrates. The deposited substrates were annealed for 10 min, in-situ, at temperatures between 500°C and 750°C using 50°C increments. The TiSi 2, which formed in this UHV process, was analyzed with XRD, AES, SEM, TEM, and four-point probe measurements. The control samples exhibited the C49 to C54 transition at a temperature of 750°C. However, the TiSi 2 samples with 5Å and 10Å Ta interlayers displayed a significant reduction of the phase transition temperature. The XRD analysis indicated that the C49 to C54 transition temperature of TiSi 2 was lowered by ∼200°C. The sheet resistance measurement showed a low resistivity characteristic of C54. The SEM and TEM micrographs showed that the Ta interlayer also suppressed the surface agglomeration of the C54 TiSi 2 film. The AES analysis data indicated that the composition of the titanium silicide showed the expected Ti:Si stoichiometry of 1:2.

UR - http://www.scopus.com/inward/record.url?scp=0033279425&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033279425&partnerID=8YFLogxK

M3 - Chapter

VL - 564

SP - 59

EP - 64

BT - Materials Research Society Symposium - Proceedings

ER -