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Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates
Z. H. Wu, Y. Q. Sun, J. Yin, Y. Y. Fang, J. N. Dai, C. Q. Chen, Q. Y. Wei, T. Li, K. W. Sun, A. M. Fischer, Fernando Ponce
Research output: Contribution to journal › Article › peer-review
3
Scopus
citations