Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers

Brian Skromme, A. Sasikumar, Bruce M. Green, O. L. Hartin, Charles E. Weitzel, M. G. Miller

Research output: Contribution to journalArticle

Abstract

The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrdinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.

Original languageEnglish (US)
Article number5427054
Pages (from-to)749-754
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number4
DOIs
StatePublished - Apr 2010

Fingerprint

Doping (additives)
Deep level transient spectroscopy
Poisson equation
High electron mobility transistors
Code division multiple access
Semiconductor quantum wells
Modulation
Degradation
Temperature
Electrons
gallium arsenide

Keywords

  • Deep levels
  • Deep-level transient spectroscopy (DLTS)
  • DX centers
  • Linearity
  • Modulation-doped field-effect transistors (MODFETs)
  • Quantum-well devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers. / Skromme, Brian; Sasikumar, A.; Green, Bruce M.; Hartin, O. L.; Weitzel, Charles E.; Miller, M. G.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 4, 5427054, 04.2010, p. 749-754.

Research output: Contribution to journalArticle

Skromme, Brian ; Sasikumar, A. ; Green, Bruce M. ; Hartin, O. L. ; Weitzel, Charles E. ; Miller, M. G. / Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 4. pp. 749-754.
@article{77cd056f1af74beebe54fe91a5b0f67f,
title = "Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers",
abstract = "The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrdinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.",
keywords = "Deep levels, Deep-level transient spectroscopy (DLTS), DX centers, Linearity, Modulation-doped field-effect transistors (MODFETs), Quantum-well devices",
author = "Brian Skromme and A. Sasikumar and Green, {Bruce M.} and Hartin, {O. L.} and Weitzel, {Charles E.} and Miller, {M. G.}",
year = "2010",
month = "4",
doi = "10.1109/TED.2010.2041868",
language = "English (US)",
volume = "57",
pages = "749--754",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers

AU - Skromme, Brian

AU - Sasikumar, A.

AU - Green, Bruce M.

AU - Hartin, O. L.

AU - Weitzel, Charles E.

AU - Miller, M. G.

PY - 2010/4

Y1 - 2010/4

N2 - The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrdinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.

AB - The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrdinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.

KW - Deep levels

KW - Deep-level transient spectroscopy (DLTS)

KW - DX centers

KW - Linearity

KW - Modulation-doped field-effect transistors (MODFETs)

KW - Quantum-well devices

UR - http://www.scopus.com/inward/record.url?scp=77950299618&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950299618&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2041868

DO - 10.1109/TED.2010.2041868

M3 - Article

AN - SCOPUS:77950299618

VL - 57

SP - 749

EP - 754

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

M1 - 5427054

ER -