Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/ingaas hemts due to si-related DX centers

Brian Skromme, A. Sasikumar, Bruce M. Green, O. L. Hartin, Charles E. Weitzel, M. G. Miller

Research output: Contribution to journalArticlepeer-review

Abstract

The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down to -40°C, as measured by the adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, in which the planar Si doping layers are placed within thin single GaAs quantum wells inside the AlGaAs barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers is effectively eliminated. The linearity improvements are therefore attributed to the elimination of this trapping. Self-consistent solutions of the Schrdinger and Poisson equations show that the transfer of the donor electrons into the channel is essentially the same in the modified and conventional structures.

Original languageEnglish (US)
Article number5427054
Pages (from-to)749-754
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number4
DOIs
StatePublished - Apr 1 2010

Keywords

  • DX centers
  • Deep levels
  • Deep-level transient spectroscopy (DLTS)
  • Linearity
  • Modulation-doped field-effect transistors (MODFETs)
  • Quantum-well devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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