Reduction of GaAs diode laser spontaneous emission

W. Streifer, Fernando Ponce, D. R. Scifres

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high-reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al2O3 overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near-10-mW output levels.

Original languageEnglish (US)
Pages (from-to)10-12
Number of pages3
JournalApplied Physics Letters
Volume37
Issue number1
DOIs
StatePublished - 1980
Externally publishedYes

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spontaneous emission
semiconductor lasers
flat surfaces
apertures
coatings
output
laser modes
stimulated emission
thresholds
estimates
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction of GaAs diode laser spontaneous emission. / Streifer, W.; Ponce, Fernando; Scifres, D. R.

In: Applied Physics Letters, Vol. 37, No. 1, 1980, p. 10-12.

Research output: Contribution to journalArticle

Streifer, W. ; Ponce, Fernando ; Scifres, D. R. / Reduction of GaAs diode laser spontaneous emission. In: Applied Physics Letters. 1980 ; Vol. 37, No. 1. pp. 10-12.
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