Reduction of GaAs diode laser spontaneous emission

W. Streifer; F. A. Ponce; D. R. Scifres

doi:10.1063/1.91681

Reduction of GaAs diode laser spontaneous emission

W. Streifer, F. A. Ponce, D. R. Scifres

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4 Scopus citations

Abstract

Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high-reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al₂O₃ overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near-10-mW output levels.

Original language	English (US)
Pages (from-to)	10-12
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1063/1.91681
State	Published - 1980
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high-reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al2O3 overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near-10-mW output levels.",

author = "W. Streifer and Ponce, {F. A.} and Scifres, {D. R.}",

year = "1980",

doi = "10.1063/1.91681",

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AU - Streifer, W.

AU - Ponce, F. A.

AU - Scifres, D. R.

PY - 1980

Y1 - 1980

N2 - Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high-reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al2O3 overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near-10-mW output levels.

AB - Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high-reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al2O3 overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near-10-mW output levels.

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Reduction of GaAs diode laser spontaneous emission

Abstract

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