Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

B. J. Skromme, M. C. Tamargo, J. L. De Miguel, R. E. Nahory

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (≲0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (≲0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.

Original languageEnglish (US)
Pages (from-to)2217-2219
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number22
DOIs
StatePublished - Dec 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe'. Together they form a unique fingerprint.

  • Cite this