Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

B. J. Skromme; M. C. Tamargo; J. L. De Miguel; R. E. Nahory

doi:10.1063/1.100286

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

B. J. Skromme, M. C. Tamargo, J. L. De Miguel, R. E. Nahory

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (≲0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (≲0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.

Original language	English (US)
Pages (from-to)	2217-2219
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	22
DOIs	https://doi.org/10.1063/1.100286
State	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.100286

Cite this

@article{c7765c94cacc4388b98fc27e416c258c,

title = "Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe",

abstract = "We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (≲0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (≲0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.",

author = "Skromme, {B. J.} and Tamargo, {M. C.} and {De Miguel}, {J. L.} and Nahory, {R. E.}",

year = "1988",

doi = "10.1063/1.100286",

language = "English (US)",

volume = "53",

pages = "2217--2219",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

AU - Skromme, B. J.

AU - Tamargo, M. C.

AU - De Miguel, J. L.

AU - Nahory, R. E.

PY - 1988

Y1 - 1988

N2 - We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (≲0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (≲0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.

AB - We present low-temperature ZnSe photoluminescence spectra having very narrow bound exciton linewidths (0.55 meV), which demonstrate for the first time that thin, pseudomorphic ZnSe layers with minimal inhomogeneous strain can be grown directly on GaAs by molecular beam epitaxy. Similar characterization of ZnSe/AlAs/GaAs heterostructures shows that AlAs layers up to 4 μm thick exhibit only kinetically limited, partial lattice relaxation, which prevents the overgrowth of uniform, coherently strained ZnSe layers. However, pseudomorphic ZnSe/AlAs/GaAs structures with thin (≲0.5 μm) AlAs layers exhibit the narrowest bound exciton peaks (≲0.37 meV full width at half maximum) ever reported for heteroepitaxial ZnSe, indicating a high degree of structural perfection.

UR - http://www.scopus.com/inward/record.url?scp=0004394762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004394762&partnerID=8YFLogxK

U2 - 10.1063/1.100286

DO - 10.1063/1.100286

M3 - Article

AN - SCOPUS:0004394762

SN - 0003-6951

VL - 53

SP - 2217

EP - 2219

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this