Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes

Chih Chien Pan, Tao Gilbert, Nathan Pfaff, Shinichi Tanaka, Yuji Zhao, Daniel Feezell, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (2021) plane. At a current density 100 A/cm 2, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm 2. A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.

Original languageEnglish (US)
Article number102103
JournalApplied Physics Express
Volume5
Issue number10
DOIs
StatePublished - Oct 1 2012
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Pan, C. C., Gilbert, T., Pfaff, N., Tanaka, S., Zhao, Y., Feezell, D., Speck, J. S., Nakamura, S., & DenBaars, S. P. (2012). Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes. Applied Physics Express, 5(10), [102103]. https://doi.org/10.1143/APEX.5.102103