Reducing radiation-hardened digital circuit power consumption

John K. McIver, Lawrence T. Clark

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Low-power radiation-hardened sequential digital circuits supporting multiple supply voltages, integrated logic, and a low standby power state are presented. By basing the design on proven radiation hard circuits, single event effects hardness is guaranteed. The circuit is based on differential cascode voltage switch logic, which provides an integral level shift and allows storage at the full supply voltage supported by the process, while allowing the combinatorial logic supply voltage to scale for power savings. When compared to a conventional master-slave flip-flop design, the proposed flip-flop design provides up to 80% energy reduction with logic operating at reduced voltage and speed. Fifty-percent energy reduction is obtained without compromising speed when operating with all circuits at maximum voltage.

Original languageEnglish (US)
Pages (from-to)2503-2509
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number6
DOIs
StatePublished - Dec 2005

Fingerprint

digital electronics
Digital circuits
Electric power utilization
Radiation
logic
Electric potential
electric potential
radiation
flip-flops
Flip flop circuits
Networks (circuits)
Sequential circuits
hardness
switches
Hardness
Switches
energy
shift

Keywords

  • Flip-flop
  • Low power
  • Low standby power
  • Multiple power-supply voltages
  • Radiation hardening
  • Silicon on insulator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Reducing radiation-hardened digital circuit power consumption. / McIver, John K.; Clark, Lawrence T.

In: IEEE Transactions on Nuclear Science, Vol. 52, No. 6, 12.2005, p. 2503-2509.

Research output: Contribution to journalArticle

McIver, John K. ; Clark, Lawrence T. / Reducing radiation-hardened digital circuit power consumption. In: IEEE Transactions on Nuclear Science. 2005 ; Vol. 52, No. 6. pp. 2503-2509.
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