Reduced quantum efficiency of a near-surface quantum well

Ying Lan Chang; I. Hsing Tan; Yong Hang Zhang; D. Bimberg; James Merz; Evelyn Hu

doi:10.1063/1.354276

Reduced quantum efficiency of a near-surface quantum well

Ying Lan Chang, I. Hsing Tan, Yong Hang Zhang, D. Bimberg, James Merz, Evelyn Hu

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The effect of the proximity of a bare barrier surface on the quantum efficiency of underlying GaAs/Al_0.3Ga_0.7As and In _0.13Ga_0.87As/GaAs quantum wells (QWs) is studied by low-temperature photoluminescence. The quantum efficiency of the resonantly excited QWs diminishes with decreasing surface barrier thickness; the onset of the reduction in quantum efficiency of the InGaAs QW occurs for a barrier that is 50 Å thicker than for the GaAs QW. A simple model of carrier tunneling to the surface is formulated to explain the dependence of the quantum efficiency on surface barrier thickness and well width and height. This model shows good agreement with both sets of experimental data.

Original language	English (US)
Pages (from-to)	5144-5148
Number of pages	5
Journal	Journal of Applied Physics
Volume	74
Issue number	8
DOIs	https://doi.org/10.1063/1.354276
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.354276

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title = "Reduced quantum efficiency of a near-surface quantum well",

abstract = "The effect of the proximity of a bare barrier surface on the quantum efficiency of underlying GaAs/Al0.3Ga0.7As and In 0.13Ga0.87As/GaAs quantum wells (QWs) is studied by low-temperature photoluminescence. The quantum efficiency of the resonantly excited QWs diminishes with decreasing surface barrier thickness; the onset of the reduction in quantum efficiency of the InGaAs QW occurs for a barrier that is 50 {\AA} thicker than for the GaAs QW. A simple model of carrier tunneling to the surface is formulated to explain the dependence of the quantum efficiency on surface barrier thickness and well width and height. This model shows good agreement with both sets of experimental data.",

author = "Chang, {Ying Lan} and Tan, {I. Hsing} and Zhang, {Yong Hang} and D. Bimberg and James Merz and Evelyn Hu",

year = "1993",

doi = "10.1063/1.354276",

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journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Reduced quantum efficiency of a near-surface quantum well

AU - Chang, Ying Lan

AU - Tan, I. Hsing

AU - Zhang, Yong Hang

AU - Bimberg, D.

AU - Merz, James

AU - Hu, Evelyn

PY - 1993

Y1 - 1993

N2 - The effect of the proximity of a bare barrier surface on the quantum efficiency of underlying GaAs/Al0.3Ga0.7As and In 0.13Ga0.87As/GaAs quantum wells (QWs) is studied by low-temperature photoluminescence. The quantum efficiency of the resonantly excited QWs diminishes with decreasing surface barrier thickness; the onset of the reduction in quantum efficiency of the InGaAs QW occurs for a barrier that is 50 Å thicker than for the GaAs QW. A simple model of carrier tunneling to the surface is formulated to explain the dependence of the quantum efficiency on surface barrier thickness and well width and height. This model shows good agreement with both sets of experimental data.

AB - The effect of the proximity of a bare barrier surface on the quantum efficiency of underlying GaAs/Al0.3Ga0.7As and In 0.13Ga0.87As/GaAs quantum wells (QWs) is studied by low-temperature photoluminescence. The quantum efficiency of the resonantly excited QWs diminishes with decreasing surface barrier thickness; the onset of the reduction in quantum efficiency of the InGaAs QW occurs for a barrier that is 50 Å thicker than for the GaAs QW. A simple model of carrier tunneling to the surface is formulated to explain the dependence of the quantum efficiency on surface barrier thickness and well width and height. This model shows good agreement with both sets of experimental data.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Reduced quantum efficiency of a near-surface quantum well

Abstract

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