TY - JOUR
T1 - Rectification at graphene-semiconductor interfaces
T2 - Zero-gap semiconductor-based diodes
AU - Tongay, S.
AU - Lemaitre, M.
AU - Miao, X.
AU - Gila, B.
AU - Appleton, B. R.
AU - Hebard, A. F.
PY - 2012
Y1 - 2012
N2 - Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.
AB - Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.
KW - Electronics
KW - Graphene
KW - Semiconductor physics
UR - http://www.scopus.com/inward/record.url?scp=84863199500&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863199500&partnerID=8YFLogxK
U2 - 10.1103/PhysRevX.2.011002
DO - 10.1103/PhysRevX.2.011002
M3 - Article
AN - SCOPUS:84863199500
SN - 2160-3308
VL - 2
SP - 1
EP - 10
JO - Physical Review X
JF - Physical Review X
IS - 1
ER -