RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS - 2. MIGRATION OF FLUORINE IN BF** plus //2-IMPLANTED SILICON.

M. Y. Tsai, D. S. Day, B. G. Streetman, Peter Williams, C. A. Evans

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

Fluorine distribution profiles for silicon implanted with BF** plus //2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture ( similar minus 110 degree C).

Original languageEnglish (US)
Pages (from-to)188-192
Number of pages5
JournalJ Appl Phys
Volume50
Issue number1
DOIs
StatePublished - Jan 1979
Externally publishedYes

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amorphous silicon
fluorine
damage
secondary ion mass spectrometry
implantation
annealing
defects
silicon
room temperature
profiles
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS - 2. MIGRATION OF FLUORINE IN BF** plus //2-IMPLANTED SILICON. / Tsai, M. Y.; Day, D. S.; Streetman, B. G.; Williams, Peter; Evans, C. A.

In: J Appl Phys, Vol. 50, No. 1, 01.1979, p. 188-192.

Research output: Contribution to journalArticle

Tsai, M. Y. ; Day, D. S. ; Streetman, B. G. ; Williams, Peter ; Evans, C. A. / RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS - 2. MIGRATION OF FLUORINE IN BF** plus //2-IMPLANTED SILICON. In: J Appl Phys. 1979 ; Vol. 50, No. 1. pp. 188-192.
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