Abstract
The effects of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors were investigated. Degradations of increasing reverse-biased gate leakage current and sub-threshold swing, as well as reducing saturating drain current and drain current on-off ratio were observed after reaching a critical voltage during the step-stressing. Interestingly, the degradations of dc performance for the stressed HEMT were recovered after a thermal annealing at 450°C for 10 mins. HEMT integrated with an on-chip trapezoid-shape heater was proposed to realize a self-healing device.
| Original language | English (US) |
|---|---|
| Title of host publication | CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology |
| Publisher | CS Mantech |
| Pages | 271-273 |
| Number of pages | 3 |
| State | Published - 2016 |
| Event | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: May 16 2016 → May 19 2016 |
Other
| Other | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 |
|---|---|
| Country/Territory | United States |
| City | Miami |
| Period | 5/16/16 → 5/19/16 |
Keywords
- HEMT
- Off-state step-stress
- Self-healing device
- Thermal annealing
- Thermal simulation
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering