Abstract
The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.
Original language | English (US) |
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Article number | 153504 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 15 |
DOIs | |
State | Published - Apr 13 2015 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)