Abstract

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67a;3 (a; = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

Original languageEnglish (US)
Pages (from-to)4728-4733
Number of pages6
JournalOptics Express
Volume21
Issue number4
DOIs
StatePublished - Feb 25 2013

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Semiconductor Lasers
laser cavities
semiconductor lasers
injection
continuous radiation
cavities
Injections
Lasers
Temperature
room temperature
wavelengths
Metals
Semiconductors
metals
lasing
Q factors
Equipment and Supplies

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Medicine(all)

Cite this

Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature. / Ding, K.; Hill, M. T.; Liu, Z. C.; Yin, L. J.; Van Veldhoven, P. J.; Ning, Cun-Zheng.

In: Optics Express, Vol. 21, No. 4, 25.02.2013, p. 4728-4733.

Research output: Contribution to journalArticle

Ding, K. ; Hill, M. T. ; Liu, Z. C. ; Yin, L. J. ; Van Veldhoven, P. J. ; Ning, Cun-Zheng. / Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature. In: Optics Express. 2013 ; Vol. 21, No. 4. pp. 4728-4733.
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