Abstract
We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67a;3 (a; = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.
Original language | English (US) |
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Pages (from-to) | 4728-4733 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 21 |
Issue number | 4 |
DOIs | |
State | Published - Feb 25 2013 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics