Abstract

In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

Original languageEnglish (US)
Article number7128486
Pages (from-to)1004-1033
Number of pages30
JournalProceedings of the IEEE
Volume103
Issue number7
DOIs
StatePublished - Jul 1 2015

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Memristors
Data storage equipment
Oxides

Keywords

  • 3-D integration
  • Memristor
  • radiation effects
  • ReRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Edwards, A. H., Barnaby, H., Campbell, K. A., Kozicki, M., Liu, W., & Marinella, M. J. (2015). Reconfigurable memristive device technologies. Proceedings of the IEEE, 103(7), 1004-1033. [7128486]. https://doi.org/10.1109/JPROC.2015.2441752

Reconfigurable memristive device technologies. / Edwards, Arthur H.; Barnaby, Hugh; Campbell, Kristy A.; Kozicki, Michael; Liu, Wei; Marinella, Matthew J.

In: Proceedings of the IEEE, Vol. 103, No. 7, 7128486, 01.07.2015, p. 1004-1033.

Research output: Contribution to journalArticle

Edwards, AH, Barnaby, H, Campbell, KA, Kozicki, M, Liu, W & Marinella, MJ 2015, 'Reconfigurable memristive device technologies', Proceedings of the IEEE, vol. 103, no. 7, 7128486, pp. 1004-1033. https://doi.org/10.1109/JPROC.2015.2441752
Edwards AH, Barnaby H, Campbell KA, Kozicki M, Liu W, Marinella MJ. Reconfigurable memristive device technologies. Proceedings of the IEEE. 2015 Jul 1;103(7):1004-1033. 7128486. https://doi.org/10.1109/JPROC.2015.2441752
Edwards, Arthur H. ; Barnaby, Hugh ; Campbell, Kristy A. ; Kozicki, Michael ; Liu, Wei ; Marinella, Matthew J. / Reconfigurable memristive device technologies. In: Proceedings of the IEEE. 2015 ; Vol. 103, No. 7. pp. 1004-1033.
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