In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

Original languageEnglish (US)
Article number7128486
Pages (from-to)1004-1033
Number of pages30
JournalProceedings of the IEEE
Issue number7
StatePublished - Jul 1 2015



  • 3-D integration
  • Memristor
  • radiation effects
  • ReRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Edwards, A. H., Barnaby, H., Campbell, K. A., Kozicki, M., Liu, W., & Marinella, M. J. (2015). Reconfigurable memristive device technologies. Proceedings of the IEEE, 103(7), 1004-1033. [7128486]. https://doi.org/10.1109/JPROC.2015.2441752