Reconfigurable memristive device technologies

Arthur H. Edwards; Hugh Barnaby; Kristy A. Campbell; Michael Kozicki; Wei Liu; Matthew J. Marinella

doi:10.1109/JPROC.2015.2441752

Reconfigurable memristive device technologies

Arthur H. Edwards, Hugh Barnaby, Kristy A. Campbell, Michael Kozicki, Wei Liu, Matthew J. Marinella

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

Original language	English (US)
Article number	7128486
Pages (from-to)	1004-1033
Number of pages	30
Journal	Proceedings of the IEEE
Volume	103
Issue number	7
DOIs	https://doi.org/10.1109/JPROC.2015.2441752
State	Published - Jul 1 2015

Keywords

3-D integration
Memristor
ReRAM
radiation effects

ASJC Scopus subject areas

General Computer Science
Electrical and Electronic Engineering

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10.1109/JPROC.2015.2441752

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abstract = "In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.",

keywords = "3-D integration, Memristor, ReRAM, radiation effects",

author = "Edwards, {Arthur H.} and Hugh Barnaby and Campbell, {Kristy A.} and Michael Kozicki and Wei Liu and Marinella, {Matthew J.}",

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AU - Barnaby, Hugh

AU - Campbell, Kristy A.

AU - Kozicki, Michael

AU - Liu, Wei

AU - Marinella, Matthew J.

PY - 2015/7/1

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N2 - In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

AB - In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

KW - 3-D integration

KW - Memristor

KW - ReRAM

KW - radiation effects

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Reconfigurable memristive device technologies

Abstract

Keywords

ASJC Scopus subject areas

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