Recent progress of resistive switching random access memory (RRAM)

Yi Wu, Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.

Original languageEnglish (US)
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs
StatePublished - Oct 12 2012
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: Jun 10 2012Jun 11 2012

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Other

Other2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period6/10/126/11/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wu, Y., Yu, S., Guan, X., & Wong, H. S. P. (2012). Recent progress of resistive switching random access memory (RRAM). In 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 [6243331] (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012). https://doi.org/10.1109/SNW.2012.6243331