Recent progress of resistive switching random access memory (RRAM)

Yi Wu; Shimeng Yu; Ximeng Guan; H. S.Philip Wong

doi:10.1109/SNW.2012.6243331

Recent progress of resistive switching random access memory (RRAM)

Yi Wu, Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.

Original language	English (US)
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243331
State	Published - 2012
Externally published	Yes
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: Jun 10 2012 → Jun 11 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Other

Other	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	6/10/12 → 6/11/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/SNW.2012.6243331

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title = "Recent progress of resistive switching random access memory (RRAM)",

abstract = "This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.",

author = "Yi Wu and Shimeng Yu and Ximeng Guan and Wong, {H. S.Philip}",

year = "2012",

doi = "10.1109/SNW.2012.6243331",

language = "English (US)",

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AU - Yu, Shimeng

AU - Guan, Ximeng

AU - Wong, H. S.Philip

PY - 2012

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AB - This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.

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U2 - 10.1109/SNW.2012.6243331

DO - 10.1109/SNW.2012.6243331

M3 - Conference contribution

AN - SCOPUS:84867219209

SN - 9781467309943

T3 - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

BT - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

T2 - 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012

Y2 - 10 June 2012 through 11 June 2012

ER -

Recent progress of resistive switching random access memory (RRAM)

Abstract

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