Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

H. S.Philip Wong, Sangbum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Jeyasingh, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

Original languageEnglish (US)
Title of host publication2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs
StatePublished - Jul 11 2011
Event2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States
Duration: May 22 2011May 25 2011

Publication series

Name2011 3rd IEEE International Memory Workshop, IMW 2011

Other

Other2011 3rd IEEE International Memory Workshop, IMW 2011
CountryUnited States
CityMonterey, CA
Period5/22/115/25/11

Keywords

  • PCM
  • RRAM
  • Scaling
  • component: Non-volatile memory

ASJC Scopus subject areas

  • Hardware and Architecture

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    Wong, H. S. P., Kim, S., Lee, B., Caldwell, M. A., Liang, J., Wu, Y., Jeyasingh, R., & Yu, S. (2011). Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). In 2011 3rd IEEE International Memory Workshop, IMW 2011 [5873188] (2011 3rd IEEE International Memory Workshop, IMW 2011). https://doi.org/10.1109/IMW.2011.5873188