Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

H. S Philip Wong, Sangbum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Jeyasingh, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

Original languageEnglish (US)
Title of host publication2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States
Duration: May 22 2011May 25 2011

Other

Other2011 3rd IEEE International Memory Workshop, IMW 2011
CountryUnited States
CityMonterey, CA
Period5/22/115/25/11

Fingerprint

Phase change memory
Data storage equipment

Keywords

  • component: Non-volatile memory
  • PCM
  • RRAM
  • Scaling

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Wong, H. S. P., Kim, S., Lee, B., Caldwell, M. A., Liang, J., Wu, Y., ... Yu, S. (2011). Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). In 2011 3rd IEEE International Memory Workshop, IMW 2011 [5873188] https://doi.org/10.1109/IMW.2011.5873188

Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). / Wong, H. S Philip; Kim, Sangbum; Lee, Byoungil; Caldwell, Marissa A.; Liang, Jiale; Wu, Yi; Jeyasingh, Rakesh; Yu, Shimeng.

2011 3rd IEEE International Memory Workshop, IMW 2011. 2011. 5873188.

Research output: Chapter in Book/Report/Conference proceedingChapter

Wong, HSP, Kim, S, Lee, B, Caldwell, MA, Liang, J, Wu, Y, Jeyasingh, R & Yu, S 2011, Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). in 2011 3rd IEEE International Memory Workshop, IMW 2011., 5873188, 2011 3rd IEEE International Memory Workshop, IMW 2011, Monterey, CA, United States, 5/22/11. https://doi.org/10.1109/IMW.2011.5873188
Wong HSP, Kim S, Lee B, Caldwell MA, Liang J, Wu Y et al. Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). In 2011 3rd IEEE International Memory Workshop, IMW 2011. 2011. 5873188 https://doi.org/10.1109/IMW.2011.5873188
Wong, H. S Philip ; Kim, Sangbum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh ; Yu, Shimeng. / Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). 2011 3rd IEEE International Memory Workshop, IMW 2011. 2011.
@inbook{2ec5fd8b97c14c6a91310cc53000782c,
title = "Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)",
abstract = "The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.",
keywords = "component: Non-volatile memory, PCM, RRAM, Scaling",
author = "Wong, {H. S Philip} and Sangbum Kim and Byoungil Lee and Caldwell, {Marissa A.} and Jiale Liang and Yi Wu and Rakesh Jeyasingh and Shimeng Yu",
year = "2011",
doi = "10.1109/IMW.2011.5873188",
language = "English (US)",
isbn = "9781457702266",
booktitle = "2011 3rd IEEE International Memory Workshop, IMW 2011",

}

TY - CHAP

T1 - Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

AU - Wong, H. S Philip

AU - Kim, Sangbum

AU - Lee, Byoungil

AU - Caldwell, Marissa A.

AU - Liang, Jiale

AU - Wu, Yi

AU - Jeyasingh, Rakesh

AU - Yu, Shimeng

PY - 2011

Y1 - 2011

N2 - The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

AB - The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

KW - component: Non-volatile memory

KW - PCM

KW - RRAM

KW - Scaling

UR - http://www.scopus.com/inward/record.url?scp=79959958402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959958402&partnerID=8YFLogxK

U2 - 10.1109/IMW.2011.5873188

DO - 10.1109/IMW.2011.5873188

M3 - Chapter

AN - SCOPUS:79959958402

SN - 9781457702266

BT - 2011 3rd IEEE International Memory Workshop, IMW 2011

ER -