Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

H. S.Philip Wong; Sangbum Kim; Byoungil Lee; Marissa A. Caldwell; Jiale Liang; Yi Wu; Rakesh Jeyasingh; Shimeng Yu

doi:10.1109/IMW.2011.5873188

Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

H. S.Philip Wong, Sangbum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Jeyasingh, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

Original language	English (US)
Title of host publication	2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs	https://doi.org/10.1109/IMW.2011.5873188
State	Published - 2011
Externally published	Yes
Event	2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States Duration: May 22 2011 → May 25 2011

Publication series

Name	2011 3rd IEEE International Memory Workshop, IMW 2011

Other

Other	2011 3rd IEEE International Memory Workshop, IMW 2011
Country/Territory	United States
City	Monterey, CA
Period	5/22/11 → 5/25/11

Keywords

PCM
RRAM
Scaling
component: Non-volatile memory

ASJC Scopus subject areas

Hardware and Architecture

Access to Document

10.1109/IMW.2011.5873188

Cite this

Wong, H. S. P., Kim, S., Lee, B., Caldwell, M. A., Liang, J., Wu, Y., Jeyasingh, R., & Yu, S. (2011). Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). In 2011 3rd IEEE International Memory Workshop, IMW 2011 Article 5873188 (2011 3rd IEEE International Memory Workshop, IMW 2011). https://doi.org/10.1109/IMW.2011.5873188

Wong, HSP, Kim, S, Lee, B, Caldwell, MA, Liang, J, Wu, Y, Jeyasingh, R & Yu, S 2011, Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM). in 2011 3rd IEEE International Memory Workshop, IMW 2011., 5873188, 2011 3rd IEEE International Memory Workshop, IMW 2011, 2011 3rd IEEE International Memory Workshop, IMW 2011, Monterey, CA, United States, 5/22/11. https://doi.org/10.1109/IMW.2011.5873188

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abstract = "The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.",

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AU - Wong, H. S.Philip

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AU - Liang, Jiale

AU - Wu, Yi

AU - Jeyasingh, Rakesh

AU - Yu, Shimeng

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AB - The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

KW - PCM

KW - RRAM

KW - Scaling

KW - component: Non-volatile memory

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ER -

Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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