Abstract
The properties of a new class of microwave sources, in which the power is generated by physical processes within the semiconductor, are discussed. These transit-time devices operate primarily on the properties of the carriers drifting in the applied field distributions within the semiconductor. The Gunn effect and Read diode, as well as several new instabilities which have been observed, are described.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| State | Published - 1968 |
| Externally published | Yes |
| Event | IEEE-Southwestern Conference & Exhibition, 20th-SWIEEECO Rec - Houston, TX, USA Duration: Apr 17 1968 → Apr 19 1968 |
Other
| Other | IEEE-Southwestern Conference & Exhibition, 20th-SWIEEECO Rec |
|---|---|
| City | Houston, TX, USA |
| Period | 4/17/68 → 4/19/68 |
ASJC Scopus subject areas
- Engineering(all)