RECENT ADVANCES IN SEMICONDUCTOR MICROWAVE SOURCES

DK FERRY DK

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The properties of a new class of microwave sources, in which the power is generated by physical processes within the semiconductor, are discussed. These transit-time devices operate primarily on the properties of the carriers drifting in the applied field distributions within the semiconductor. The Gunn effect and Read diode, as well as several new instabilities which have been observed, are described.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
StatePublished - 1968
Externally publishedYes
EventIEEE-Southwestern Conference & Exhibition, 20th-SWIEEECO Rec - Houston, TX, USA
Duration: Apr 17 1968Apr 19 1968

Other

OtherIEEE-Southwestern Conference & Exhibition, 20th-SWIEEECO Rec
CityHouston, TX, USA
Period4/17/684/19/68

ASJC Scopus subject areas

  • Engineering(all)

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