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Recent advances in III-nitride UV materials and Devices
Z. Y. Fan
, J. Y. Lin, H. X. Jiang
Research output
:
Contribution to conference
›
Paper
›
peer-review
5
Scopus citations
Overview
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Dive into the research topics of 'Recent advances in III-nitride UV materials and Devices'. Together they form a unique fingerprint.
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Engineering & Materials Science
Nitrides
100%
Doping (additives)
92%
Light emitting diodes
81%
Binding energy
65%
Epitaxial growth
58%
Activation energy
43%
Electrons
41%
Fabrication
30%
Chemical analysis
26%
Temperature
16%