Abstract

Three dimensional numerical model of silicon point contact concentrator solar cell was built based on the recently established set of accurate empirical models and parameters, The model was applied to reassess the loss mechanisms acting in point contact cells as previously described in a classic paper by Sinton and Swanson. The main difference was found due to injection dependence of surface recombination velocity, which wasn't considered previously. Mostly because of this fact, surface recombination was shown to dominate recombination losses at up to 30 W/cm2 light intensities. Although a good fit to the measured open circuit voltages, the built model is missing actual diffusion profiles and exact measured surface recombination properties, which is critical to improve the accuracy.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1055-1058
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Point contacts
Solar cells
Silicon
Open circuit voltage
Numerical models

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Herasimenka, S., Altermatt, P., Bowden, S., & Honsberg, C. (2012). Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1055-1058). [6317784] https://doi.org/10.1109/PVSC.2012.6317784

Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell. / Herasimenka, Stanislau; Altermatt, P.; Bowden, Stuart; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 1055-1058 6317784.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Herasimenka, S, Altermatt, P, Bowden, S & Honsberg, C 2012, Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6317784, pp. 1055-1058, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317784
Herasimenka, Stanislau ; Altermatt, P. ; Bowden, Stuart ; Honsberg, Christiana. / Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 1055-1058
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