Abstract
A range of rear surface structures have been developed and studied for the purpose of improving the performance of buried contact solar cells (BCSC). In particular, improved results are reported for the double grooved BCSC with oxidized p-type rear surface, with V oc of 685 mV having been demonstrated. The importance of including an alneal treatment is clearly evident with open circuit voltages typically degrading 60 mV without its inclusion. Devices with the same structure but with a rear floating junction are also evaluated within the study and again the dependence on an alneal is evident for cells with low surface phosphorus concentration. In the highest voltage devices, the rear boron diffused grooves contribute almost 30% of the total device dark saturation current, with test devices achieving V oc as high as 694 mV for a BCSC with the rear grooves replaced by photolithographically defined boron diffused contact regions.
Original language | English (US) |
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Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
Editors | Anon |
Publisher | IEEE |
Pages | 251-254 |
Number of pages | 4 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: Sep 29 1997 → Oct 3 1997 |
Other
Other | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference |
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City | Anaheim, CA, USA |
Period | 9/29/97 → 10/3/97 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics