Rear surface passivation in buried contact solar cells

Y. H. Tang, X. M. Dai, J. H. Zhao, A. H. Wang, S. R. Wenham, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A range of rear surface structures have been developed and studied for the purpose of improving the performance of buried contact solar cells (BCSC). In particular, improved results are reported for the double grooved BCSC with oxidized p-type rear surface, with V oc of 685 mV having been demonstrated. The importance of including an alneal treatment is clearly evident with open circuit voltages typically degrading 60 mV without its inclusion. Devices with the same structure but with a rear floating junction are also evaluated within the study and again the dependence on an alneal is evident for cells with low surface phosphorus concentration. In the highest voltage devices, the rear boron diffused grooves contribute almost 30% of the total device dark saturation current, with test devices achieving V oc as high as 694 mV for a BCSC with the rear grooves replaced by photolithographically defined boron diffused contact regions.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages251-254
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: Sep 29 1997Oct 3 1997

Other

OtherProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period9/29/9710/3/97

Fingerprint

Passivation
passivity
electric contacts
Solar cells
solar cells
Boron
grooves
boron
Open circuit voltage
Surface structure
Phosphorus
open circuit voltage
floating
phosphorus
high voltages
Electric potential
inclusions
saturation
cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Tang, Y. H., Dai, X. M., Zhao, J. H., Wang, A. H., Wenham, S. R., & Honsberg, C. (1997). Rear surface passivation in buried contact solar cells. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 251-254). IEEE.

Rear surface passivation in buried contact solar cells. / Tang, Y. H.; Dai, X. M.; Zhao, J. H.; Wang, A. H.; Wenham, S. R.; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. IEEE, 1997. p. 251-254.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tang, YH, Dai, XM, Zhao, JH, Wang, AH, Wenham, SR & Honsberg, C 1997, Rear surface passivation in buried contact solar cells. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 251-254, Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA, 9/29/97.
Tang YH, Dai XM, Zhao JH, Wang AH, Wenham SR, Honsberg C. Rear surface passivation in buried contact solar cells. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE. 1997. p. 251-254
Tang, Y. H. ; Dai, X. M. ; Zhao, J. H. ; Wang, A. H. ; Wenham, S. R. ; Honsberg, Christiana. / Rear surface passivation in buried contact solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. IEEE, 1997. pp. 251-254
@inproceedings{42b807aa420e4f88a20261a33d886f8b,
title = "Rear surface passivation in buried contact solar cells",
abstract = "A range of rear surface structures have been developed and studied for the purpose of improving the performance of buried contact solar cells (BCSC). In particular, improved results are reported for the double grooved BCSC with oxidized p-type rear surface, with V oc of 685 mV having been demonstrated. The importance of including an alneal treatment is clearly evident with open circuit voltages typically degrading 60 mV without its inclusion. Devices with the same structure but with a rear floating junction are also evaluated within the study and again the dependence on an alneal is evident for cells with low surface phosphorus concentration. In the highest voltage devices, the rear boron diffused grooves contribute almost 30{\%} of the total device dark saturation current, with test devices achieving V oc as high as 694 mV for a BCSC with the rear grooves replaced by photolithographically defined boron diffused contact regions.",
author = "Tang, {Y. H.} and Dai, {X. M.} and Zhao, {J. H.} and Wang, {A. H.} and Wenham, {S. R.} and Christiana Honsberg",
year = "1997",
language = "English (US)",
pages = "251--254",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "IEEE",

}

TY - GEN

T1 - Rear surface passivation in buried contact solar cells

AU - Tang, Y. H.

AU - Dai, X. M.

AU - Zhao, J. H.

AU - Wang, A. H.

AU - Wenham, S. R.

AU - Honsberg, Christiana

PY - 1997

Y1 - 1997

N2 - A range of rear surface structures have been developed and studied for the purpose of improving the performance of buried contact solar cells (BCSC). In particular, improved results are reported for the double grooved BCSC with oxidized p-type rear surface, with V oc of 685 mV having been demonstrated. The importance of including an alneal treatment is clearly evident with open circuit voltages typically degrading 60 mV without its inclusion. Devices with the same structure but with a rear floating junction are also evaluated within the study and again the dependence on an alneal is evident for cells with low surface phosphorus concentration. In the highest voltage devices, the rear boron diffused grooves contribute almost 30% of the total device dark saturation current, with test devices achieving V oc as high as 694 mV for a BCSC with the rear grooves replaced by photolithographically defined boron diffused contact regions.

AB - A range of rear surface structures have been developed and studied for the purpose of improving the performance of buried contact solar cells (BCSC). In particular, improved results are reported for the double grooved BCSC with oxidized p-type rear surface, with V oc of 685 mV having been demonstrated. The importance of including an alneal treatment is clearly evident with open circuit voltages typically degrading 60 mV without its inclusion. Devices with the same structure but with a rear floating junction are also evaluated within the study and again the dependence on an alneal is evident for cells with low surface phosphorus concentration. In the highest voltage devices, the rear boron diffused grooves contribute almost 30% of the total device dark saturation current, with test devices achieving V oc as high as 694 mV for a BCSC with the rear grooves replaced by photolithographically defined boron diffused contact regions.

UR - http://www.scopus.com/inward/record.url?scp=0031385579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031385579&partnerID=8YFLogxK

M3 - Conference contribution

SP - 251

EP - 254

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

A2 - Anon, null

PB - IEEE

ER -